BLF6G27L-50BN,118 NXP Semiconductors, BLF6G27L-50BN,118 Datasheet - Page 2

• Manufacturer Part Number: BLF6G27L-50BN,118
• Description: RF MOSFET Power Single 65V 0.25Ohms
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27L-50BN,118

• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.25 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Package / Case: SOT-1112A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G27L-50BN_6G27LS-50BN
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF6G27L-50BN (SOT1112A)
1
2
3
4, 5
6, 7
BLF6G27LS-50BN (SOT1112B)
1
2
3
4, 5
6, 7
Type number
BLF6G27L-50BN
BLF6G27LS-50BN
Symbol
V
V
V
I
T
T
D
stg
j
DS
GS
GS(sense)
Connected to flange.
Pinning
Ordering information
Limiting values
drain
gate
source
sense drain
sense gate
drain
gate
source
sense drain
sense gate
Description
Parameter
drain-source voltage
gate-source voltage
sense gate-source voltage
drain current
storage temperature
junction temperature
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
Rev. 2 — 7 April 2011
flanged ceramic package; 2 mounting holes; 6 leads
earless flanged ceramic package; 6 leads
[1]
[1]
BLF6G27L(S)-50BN
Conditions
Simplified outline
4
6
4
6
1
2
1
2
Power LDMOS transistor
3
5
7
5
7
3
Min
-
−0.5
−0.5
-
−65
-
Graphic symbol
© NXP B.V. 2011. All rights reserved.
2
2
12
200
Max
65
+13
+9
+150
1
1
3
3
Version
SOT1112A
SOT1112B
4, 5
4, 5
sym126
sym126
Unit
V
V
V
A
°C
°C
2 of 16
6, 7
6, 7