TGF2022-60 TriQuint, TGF2022-60 Datasheet - Page 8

RF GaAs DC-20GHz 6.0mm Pwr pHEMT (0.35um)

TGF2022-60

Manufacturer Part Number
TGF2022-60
Description
RF GaAs DC-20GHz 6.0mm Pwr pHEMT (0.35um)
Manufacturer
TriQuint
Datasheet

Specifications of TGF2022-60

Mounting Style
SMD/SMT
Gate-source Breakdown Voltage
- 8 V
Package / Case
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1031683

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TGF2022-60
Manufacturer:
QORVO
Quantity:
285
Reflow process assembly notes:
Component placement and adhesive attachment assembly notes:
Interconnect process assembly notes:
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200 °C.
Assembly Process Notes
Product Datasheet
TGF2022-60
September 7, 2007
Rev -
8

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