NE3210S01-T1B CEL, NE3210S01-T1B Datasheet - Page 7

• Manufacturer Part Number: NE3210S01-T1B
• Description: RF GaAs Super Lo Noise HJFET
• Manufacturer: CEL

Specifications of NE3210S01-T1B

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 55 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 165 mW
• Package / Case: SO-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FET NONLINEAR MODEL PARAMETERS
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
NE3210S01 NONLINEAR MODEL
SCHEMATIC
(1) Series IV Libra TOM Model
Parameters
CGDO
DELTA1
VTOSC
ALPHA
BETA
GAMMA
GAMMADC
DELTA
CGSO
DELTA2
CDS
RDB
CBS
VBR
VTO
TAU
VBI
RIS
RID
FC
IS
Q
N
0.014e-12
0.12e-12
0.36e-12
0.0952
-0.798
Infinity
1e-14
4e-12
0.072
0.065
5000
1e-9
Q1
2.5
0.5
0.6
0.3
0.6
0.5
0
8
1
0
0
GATE
Parameters
BETATCE
RGMET
VTOTC
TNOM
FFE
XTI
RG
RD
RS
EG
KF
AF
CGS_PKG
6 ohms
0.04pF
Rgx
1.43
Q1
0.5
27
8
3
0
0
1
3
0
0
1
CGD_PKG
0.001pF
0.72nH
Lgx
(1)
Q1
Rsx
0.06 ohms
0.1nH
Lsx
SOURCE
0.68nH
UNITS
MODEL RANGE
Frequency:
Bias:
Date:
Ldx
time
capacitance
inductance
resistance
voltage
current
Parameter
6 ohms
Rdx
0.1 to 22.5 GHz
V
1/99
DS
= 1 V to 3 V, I
CDS_PKG
0.035PF
DRAIN
seconds
farads
henries
ohms
volts
amps
D
Units
= 5 mA to 30 mA
Updated: 9-13-06