NE97733-T1-A CEL, NE97733-T1-A Datasheet

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NE97733-T1-A

Manufacturer Part Number
NE97733-T1-A
Description
RF Bipolar Small Signal PNP High Frequency
Manufacturer
CEL
Datasheet
1.NE97733-A.pdf (6 pages)

Specifications of NE97733-T1-A

Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
PNP
Continuous Collector Current
- 0.05 A
Power Dissipation
0.2 W
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ELECTRICAL CHARACTERISTICS
• HIGH GAIN BANDWIDTH PRODUCT:
• HIGH SPEED SWITCHING CHARACTERISTICS
• NPN COMPLIMENT AVAILABLE: NE68133
• HIGH INSERTION POWER GAIN:
DESCRIPTION
FEATURES
NEC’s NE97733 PNP silicon transistor is designed for
ultrahigh speed current mode switching applications and
microwave amplifiers up to 3.5 GHz. The NE97733 offers
excellent performance and reliability at low cost.
Notes:
1. Electronic Industrial Association of Japan.
2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
SYMBOLS
f
|S
T
|S
= 8.5 GHz TYP
21E
C
I
I
h
NF
CBO
EBO
21E
P
f
RE 2
FE
T
|
T
2
|
2
= 12 dB at 1 GHz
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at V
Noise Figure at V
Insertion Power Gain at V
Forward Current Gain Ratio at V
Collector Cutoff Current at V
Emitter Cutoff Current at V
Feedback Capacitance at V
Total Power Dissipation
EIAJ
CE
PACKAGE OUTLINE
1
= -8 V, I
REGISTERED NUMBER
PART NUMBER
CE
BE
FREQUENCY TRANSISTOR
CB
C
CB
= -8 V, I
CE
= -1 V, I
= -3 mA
= -10 V, I
= -10 V, I
= -8 V, I
CE
= -8 V, I
C
C
(T
= -20 mA, f = 1 GHz
= 0
C
E
A
E
= 0 mA, f = 1 MHz
= 25°C)
= -20 mA
= 0
C
= -20 mA
PNP SILICON HIGH
33 (SOT 23 STYLE)
UNITS
GHz
mW
dB
dB
µA
µA
pF
California Eastern Laboratories
MIN
6.0
8.0
20
NE97733
2SA1977
NE97733
TYP
12.0
8.5
1.5
0.5
33
40
MAX
-0.1
-0.1
100
200
3.0
0.1

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NE97733-T1-A Summary of contents

Page 1

... GHz 21E 2 DESCRIPTION NEC’s NE97733 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97733 offers excellent performance and reliability at low cost. ELECTRICAL CHARACTERISTICS PART NUMBER 1 EIAJ REGISTERED NUMBER PACKAGE OUTLINE ...

Page 2

... I Collector Current C T Junction Temperature J T Storage Temperature STG Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES DC POWER DERATING CURVES 400 300 200 NE97733 100 100 Ambient Temperature, T GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT -10 Collector Current, I ...

Page 3

TYPICAL PERFORMANCE CURVES DC CURRENT GAIN COLLECTOR CURRENT 100 1.0 -0.1 -1.0 -10 Collector Current SWITCHING CHARACTERISTICS Parameter Symbol t Turn-on Delay Time (delay Rise Time r t Turn-off Delay Time ...

Page 4

TYPICAL SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1 1.5 -0 -0.4 -0.6 -0 FREQUENCY S 11 (GHz) MAG ANG 0.50 0.428 -126.3 ...

Page 5

... DATA SUBJECT TO CHANGE WITHOUT NOTICE +0.10 0.4 -0.05 3 (ALL LEADS) +0.10 0.65 -0.15 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector +0.10 0.16 -0.06 PACKAGING Tape & Reel RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS 3-174 NE97733 OUTLINE 33 RECOMMENDED P.C.B. LAYOUT 2 1.9 0.95 0.8 1 1.0 PRINTED IN USA ON RECYCLED PAPER -7/98 ...

Page 6

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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