NE722S01 CEL, NE722S01 Datasheet - Page 3

• Manufacturer Part Number: NE722S01
• Description: RF GaAs C-X Band GaAs MESFET
• Manufacturer: CEL

Specifications of NE722S01

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 0.045 S
• Gate-source Breakdown Voltage: - 5 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 250 mW
• Package / Case: SO-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
-10
20
15
10
-5
5
0
-15
OUTPUT POWER vs. INPUT POWER
V
f
in
DS
= 12 GHz
= 3.0 V, I
-10
Input Power, P
D
= 30 mA
-5
0
in
(dBm)
5
10
15
(T
A
= 25°C)