NESG2101M05-T1 CEL, NESG2101M05-T1 Datasheet - Page 3

• Manufacturer Part Number: NESG2101M05-T1
• Description: RF Germanium NPN SiGe High Freq
• Manufacturer: CEL

Specifications of NESG2101M05-T1

• Mounting Style: SMD/SMT
• Power Dissipation: 130 mW
• Package / Case: M05
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
0.0001
0.001
1 000
0.01
100
100
100
0.1
10
10
90
80
70
60
50
40
30
20
10
1
0.4
0
0.1
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage, V
V
CE
Base to Emitter Voltage, V
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
0.5
COLLECTOR CURRENT vs.
= 3 V
1
COLLECTOR CURRENT
Collector Current, l
DC CURRENT GAIN vs.
0.6
1
2
0.7
3
0.8
10
C
4
(mA)
BE
CE
V
0.9
I
B
(V)
CE
5
= 50 A
500 A
450 A
400 A
350 A
300 A
250 A
200 A
150 A
100 A
(V)
= 2 V
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
1.0
100
6
(T
A
= 25°C)
0.0001
1 000
0.001
1 000
0.01
100
100
0.1
100
10
10
10
1
0.1
0.4
0.1
V
CE
Base to Emitter Voltage, V
BASE TO EMITTER VOLTAGE
0.5
COLLECTOR CURRENT vs.
= 4 V
COLLECTOR CURRENT
Collector Current, l
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Collector Current, l
DC CURRENT GAIN vs.
0.6
1
1
0.7
0.8
10
10
C
C
(mA)
(mA)
BE
V
0.9
V
CE
CE
(V)
= 1 V
= 3 V
100
1.0
100