NE960R275 CEL, NE960R275 Datasheet
NE960R275
Specifications of NE960R275
Related parts for NE960R275
NE960R275 Summary of contents
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... HIGH EFFICIENCY: 35% TYP @ 14.5 GHz • HIGH RELIABILITY • CLASS A OPERATION DESCRIPTION The NE960R275 is a Power GaAs MESFET covering the 4 GHz to 18 GHz range and is designed for X and Ku Band amplifiers and oscillator applications. The device incorporates WSi (tungsten silicide) gate and sili- con dioxide glassivation ...
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... NE960R275 ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate to Source Voltage GS P Total Power Dissipation t I Drain Current D I Gate Current (forward Gate Current (reverse Channel Temperature CH T Storage Temperature STG Note: 1. Operation in excess of any one of these parameters may result in permanent damage ...
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... NE960R275 TYPICAL SCATTERING PARAMETERS NE960R275 DSQ FREQUENCY S 11 GHz MAG ANG 2.0 0.89 -113 3.0 0.86 -129 4.0 0.85 -138 5.0 0.84 -140 6.0 0.81 -144 7.0 0.83 -152 8.0 0.81 -163 9.0 0.75 -176 10.0 0.71 166 11.0 0.62 140 12 ...