SD1407 STMicroelectronics, SD1407 Datasheet
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SD1407
Manufacturer Part Number
SD1407
Description
RF Bipolar Power NPN 28.0V 30MHz
Manufacturer
STMicroelectronics
Specifications of SD1407
Dc Collector/base Gain Hfe Min
10
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single
Maximum Operating Frequency
30 MHz
Collector- Emitter Voltage Vceo Max
36 V
Emitter- Base Voltage Vebo
4 V
Continuous Collector Current
20 A
Maximum Dc Collector Current
20 A
Power Dissipation
270 W
Package / Case
M174
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Manufacturer
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DESCRIPTION
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The SD1407 is a 28 V epitaxial silicon NPN planar
transistor designed primarily for SSB communica-
tions. This device utilizes state-of-the-art diffused
emitter ballasting for improved ruggedness and
reliability.
ABSOLUTE MAXIMUM RATINGS (T
THERMAL DATA
October 1992
30 MHz
28 VOLTS
IMD 30 dB
COMMON EMITTER
GOLD METALLIZATION
P
OUT
Symbol
R
P
V
V
V
T
TH(j-c)
DISS
CBO
CEO
EBO
T
STG
I
C
J
125 W MIN. WITH 15 dB GAIN
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Junction-Case Thermal Resistance
Parameter
RF & MICROWAVE TRANSISTORS
case
25 C)
ORDER CODE
HF SSB APPLICATIONS
SD1407
1. Collector
2. Emitter
PIN CONNECTION
.500 4LFL (M174)
epoxy sealed
65 to +150
Value
+200
0.65
270
4.0
65
36
20
3. Base
4. Emitter
BRANDING
SD1407
1407
Unit
C/W
W
V
V
V
A
C
C
1/4