BLF6G20LS-140 /T3 NXP Semiconductors, BLF6G20LS-140 /T3 Datasheet - Page 4

• Manufacturer Part Number: BLF6G20LS-140 /T3
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20LS-140 /T3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 39 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 35.5W(Typ)
• Power Gain (typ)@vds: 16.5@28VdB
• Frequency (min): 1.93GHz
• Frequency (max): 1.99GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13.5S
• Drain Source Resistance (max): 70(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 3.57@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 30%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G20LS-140,118

NXP Semiconductors
8. Test information
Table 8.
[1]
[2]
BLF6G20LS-140_1
Product data sheet
Component
C1
C2
C3
C4
C5
C6
C7
C8, C9
C10
C11, C12, C13, C14
C20
L1
Q1
R1
R2
R3
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
List of components (see
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
ferrite SMD bead
BLF6G20LS-140
SMD resistor
SMD resistor
SMD resistor
Fig 1.
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
and thickness = 0.76 mm. See
Component layout
Figure
1)
Rev. 01 — 27 February 2009
V
C1
C7
GG
R2
C2
C6
Value
0.5 pF
10 pF
0.9 pF
1.1 pF
1.4 pF
15 pF
10 F; 50 V
1.2 pF
13 pF
4.7 F; 50 V
220 F; 35 V
-
-
0
3.3 k
9.1
C4
Table 8
C5
C3
R1
for list of components.
Q1
[1]
[2]
[2]
[2]
[2]
[2]
[2]
[2]
Remarks
TDK C5750X7R1H106M or equivalent
TDK C4532X7R1H475M or equivalent
Ferroxcube BDS 3/3/8.9-4S2 or equivalent
C9
C8
BLF6G20LS-140
C15
C16 C11 C12
C13 C14
Power LDMOS transistor
C20
C10
001aah589
R3
© NXP B.V. 2009. All rights reserved.
V
L1
DD
r
= 3.5
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