BLF6G27S-45 NXP Semiconductors, BLF6G27S-45 Datasheet - Page 11

• Manufacturer Part Number: BLF6G27S-45
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27S-45

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.385 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 20 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27S-45,112

NXP Semiconductors
BLF6G27-45_BLF6G27S-45_3
Product data sheet
Table 9.
f
(GHz)
2.50
2.55
2.60
2.65
2.70
Measured test circuit impedances
Rev. 03 — 15 December 2008
Z
( )
11.1
10.6
10.1
9.6
9.1
BLF6G27-45; BLF6G27S-45
i
j10.2
j9.8
j11.0
j10.8
j10.5
WiMAX power LDMOS transistor
Z
( )
18.4
16.9
15.6
14.4
13.3
o
j9.1
j9.2
j9.2
j9.1
j8.9
© NXP B.V. 2008. All rights reserved.
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