PD57060 STMicroelectronics, PD57060 Datasheet - Page 10

• Manufacturer Part Number: PD57060
• Description: RF MOSFET Power N-Ch 65 Volt 7.0 Amp
• Manufacturer: STMicroelectronics

Specifications of PD57060

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 79 W
• Maximum Operating Temperature: + 165 C
• Package / Case: PowerSO-10-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 60W(Min)
• Power Gain (typ)@vds: 14.3dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Forward Transconductance (typ): 2.5(Min)S
• Input Capacitance (typ)@vds: 83@28VpF
• Output Capacitance (typ)@vds: 58@28VpF
• Reverse Capacitance (typ): 3@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 54%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 79000mW
• Vswr (max): 5(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PD57060 - PD57060S
Note (1): Resin protrusions not included (max value: 0.15 mm per side)
10/12
DIM.
D1
R1
R2
A1
A2
A3
A4
E1
E2
E3
T1
T2
G
D
E
a
b
F
L
T
c
PowerSO-10RF Formed Lead (Gull Wing) MECHANICAL DATA
13.85
2 deg
MIN.
0.15
0.23
3.4
1.2
5.4
9.4
7.4
9.3
7.3
5.9
0.8
0
10 deg
5 deg
6 deg
TYP.
0.05
5.53
0.27
14.1
mm
3.5
1.3
0.2
0.2
9.5
7.5
9.4
7.4
6.1
0.5
1.2
0.8
1
14.35
8 deg
MAX
0.25
5.65
0.32
0.25
0.1
3.6
1.4
9.6
7.6
9.5
7.5
6.3
1.1
0.134
0.046
0.005
0.212
0.008
0.370
0.290
0.544
0.365
0.286
0.231
0.030
2 deg
MIN.
0.
CRITICAL DIMENSIONS:
- Stand-off (A1)
- Overall width (L)
0.0019
10 deg
0.137
0.007
0.007
0.217
0.374
0.295
0.555
0.292
0.019
0.047
0.039
0.031
5 deg
6 deg
Inch
TYP.
0.05
0.01
0.37
0.24
0.0038
0.142
0.054
0.009
0.221
0.012
0.377
0.298
0.565
0.375
0.294
0.247
0.042
8 deg
MAX
0.01