PD57002S STMicroelectronics, PD57002S Datasheet - Page 16

• Manufacturer Part Number: PD57002S
• Description: RF MOSFET Power N-Ch 65 Volt 0.25A
• Manufacturer: STMicroelectronics

Specifications of PD57002S

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.25 A
• Power Dissipation: 4.75 W
• Maximum Operating Temperature: + 165 C
• Package / Case: PowerSO-10-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Power Gain (typ)@vds: 15(Min)dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Input Capacitance (typ)@vds: 7.1@28VpF
• Output Capacitance (typ)@vds: 5.8@28VpF
• Reverse Capacitance (typ): 0.1@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 45(Min)%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 4750mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PD57002 - PD57002S
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