PD55008L STMicroelectronics, PD55008L Datasheet - Page 2

• Manufacturer Part Number: PD55008L
• Description: RF MOSFET Power N-Ch 40 Volt 4 Amp
• Manufacturer: STMicroelectronics

Specifications of PD55008L

• Forward Transconductance Gfs (max / Min): 1.6 S
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Transistor Polarity: N-Channel
• Configuration: Single Triple Drain Triple Gate
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: - 0.5 V to + 15 V
• Continuous Drain Current: 5 A
• Power Dissipation: 19.5 W
• Maximum Operating Temperature: + 150 C
• Package / Case: VFQFPN Power Flat 14
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PD55008L
ELECTRICAL SPECIFICATION (T
STATIC
DYNAMIC
ESD PROTECTION CHARACTERISTICS
MOISTURE SENSITIVITY LEVEL
2/9
Human Body Model
Machine Model
J-STD-020B
mismatch
Symbol
Symbol
V
V
P
C
C
Load
DS(ON)
I
C
I
G
GS(Q)
G
DSS
GSS
OUT
OSS
RSS
ISS
FS
D
P
V
V
V
V
ALL PHASE ANGLES
V
V
V
V
V
V
V
V
DD
DD
DD
DD
GS
GS
DS
GS
DS
GS
GS
GS
= 12.5 V
= 12.5 V
= 12.5 V
= 15.5 V
= 10 V I
= 10 V
= 0 V
= 5 V
= 10 V
= 0 V
= 0 V
= 0 V
V
V
V
V
V
I
I
D
DS
DS
DS
DS
DS
D
D
= 150 mA
= 1.5 A
= 0.5 A
I
I
I
I
= 28 V
= 0 V
= 12.5 V
= 12.5 V
= 12.5 V
DQ
DQ
DQ
DQ
Test Methodology
Test Conditions
= 150 mA
= 150 mA
= 150 mA
= 150 mA
Test Conditions
CASE
Test Conditions
f = 1 MHz
f = 1 MHz
f = 1 MHz
= 25
P
P
P
OUT
OUT
OUT
°
C)
= 8 W f = 500 MHz
= 8 W f = 500 MHz
= 8 W f = 500 MHz
f = 500 MHz
Min.
20:1
Min.
2.0
17
55
8
Typ.
Typ.
0.13
1.6
3.2
19
63
53
38
Rating
MSL 3
Class
Max.
M3
Max.
0.14
2
5.0
1
1
VSWR
Unit
Unit
mho
dB
W
%
pF
pF
pF
V
V
A
A