PD55015 STMicroelectronics, PD55015 Datasheet - Page 3

• Manufacturer Part Number: PD55015
• Description: RF MOSFET Power N-Ch 40 Volt 5 Amp
• Manufacturer: STMicroelectronics

Specifications of PD55015

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5 A
• Power Dissipation: 73 W
• Maximum Operating Temperature: + 165 C
• Package / Case: PowerSO-10-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 40V
• Output Power (max): 15W(Min)
• Power Gain (typ)@vds: 14dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Forward Transconductance (typ): 2.5S
• Input Capacitance (typ)@vds: 89@12.5VpF
• Output Capacitance (typ)@vds: 60@12.5VpF
• Reverse Capacitance (typ): 6.5@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 73000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
Gate-Source Voltage vs. Case Temperature
C (pF)
1000
100
10
1.04
1.02
0.98
0.96
1
1
0
-25
f = 1 M H z
V
5
DS
= 10 V
0
Tc, CASE TEMPERATURE (°C)
10
VDS (V)
15
25
20
50
I
D
= .25 A
25
I
D
I
D
= 1A
= 3A
I
I
D
C r s s
D
C is s
C os s
= 2A
= 1.5 A
30
75
Drain Current vs. Gate Voltage
3.5
2.5
1.5
0.5
4
3
2
0
1
2.5
3
Vgs, GATE-SOURCE VOLTAGE (V)
3.5
PD55015 - PD55015S
4
4.5
V
DS
= 10 V
3/18
5