STPS16150CT STMicroelectronics, STPS16150CT Datasheet - Page 3

• Manufacturer Part Number: STPS16150CT
• Description: DIODE SCHOTTKY 150V 8A TO-220AB
• Manufacturer: STMicroelectronics

Specifications of STPS16150CT

• Voltage - Forward (vf) (max) @ If: 920mV @ 8A
• Current - Reverse Leakage @ Vr: 3µA @ 150V
• Current - Average Rectified (io) (per Diode): 8A
• Voltage - Dc Reverse (vr) (max): 150V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-2739-5

Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
100.0
120
100
1E+5
1E+4
1E+3
1E+2
1E+1
1E+0
1E-1
10.0
80
60
40
20
1E-3
0
1.0
0.1
IM(A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
IR(µA)
I
IFM(A)
M
VR(V)
=0.5
t
25
Tj=125°C
1E-2
Typical values
Tj=125°C
50
Tj=175°C
Tj=125°C
Tj=150°C
VFM(V)
Tj=75°C
Tj=25°C
t(s)
75
Tj=25°C
1E-1
100
125
Tc=50°C
Tc=125°C
Tc=75°C
1E+0
150
Fig. 46 Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 8: Junction capacitance versus reverse voltage
applied (typical values, per diode).
1000
Fig. 10: Thermal resistance junction to ambient ver-
sus copper surface under tab (Epoxy printed circuit
board, copper thckness: 35µm) (STPS16150CG only).
80
70
60
50
40
30
20
10
100
0
1E-3
10
0
Rth(j-a) (°C/W)
Zth(j-c)/Rth(j-c)
= 0.2
1
= 0.5
= 0.1
C(pF)
Single pulse
2
2
4
1E-2
6
5
8
10
S(cm²)
tp(s)
STPS16150CT/CG/CR
VR(V)
10
20
12
1E-1
14
50
=tp/T
16
100
T
F=1MHz
Tj=25°C
18
tp
1E+0
200
3/5
20