STTH2003CFP STMicroelectronics, STTH2003CFP Datasheet - Page 5

• Manufacturer Part Number: STTH2003CFP
• Description: DIODE FAST DL 300V 10A TO220FPAB
• Manufacturer: STMicroelectronics

Specifications of STTH2003CFP

• Voltage - Forward (vf) (max) @ If: 1.25V @ 10A
• Current - Reverse Leakage @ Vr: 20µA @ 300V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 35ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 300 V
• Forward Voltage Drop: 1.25 V at 10 A
• Recovery Time: 35 ns
• Forward Continuous Current: 20 A
• Max Surge Current: 110 A
• Reverse Current Ir: 20 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Capacitance, Junction: 12 pF
• Current, Forward: 20 A
• Current, Surge: 110 A
• Package Type: TO-220FPAB
• Primary Type: Rectifier
• Resistance, Thermal, Junction To Case: 4 °C/W
• Speed, Switching: Fast Recovery
• Temperature, Junction, Maximum: +175 °C
• Time, Recovery: 35 ns
• Voltage, Forward: 1 V
• Voltage, Reverse: 300 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4407-5

STTH2003C
Figure 7.
Figure 9.
Figure 11. Thermal resistance junction to
0.60
0.50
0.40
0.30
0.20
0.10
0.00
10
80
70
60
50
40
30
20
10
8
6
4
2
0
0
0
0
V
R
0
FP
S factor
th(j-a)
I =I
T =125°C
F
j
(V)
F(AV)
50
50
(°C/W)
5
100
100
Softness factor (tb/ta) versus dI
(typical values, per diode)
Transient peak forward voltage
versus dI
diode) (TO-220AB)
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, copper thickness:
35 µm) (D
10
150
150
15
200
200
S(Cu)(cm²)
dI /dt(A/µs)
F
2
dI /dt(A/µs)
/dt (90% confidence, per
F
PAK).
F
250
20
250
300
300
25
350
350
30
400
400
35
450
450
V =200V
T =125°C
R
j
F
/dt
500
500
40
Figure 8.
Figure 10. Forward recovery time versus dI
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
500
400
300
200
100
0
25
0
t (ns)
fr
50
100
Relative variation of dynamic
parameters versus junction
temperature (reference: T
(90% confidence, per diode)
50
150
200
dI /dt(A/µs)
S factor
I
RM
F
T (°C)
250
75
j
300
350
Characteristics
100
V =1.1 x V max.
FR
400
T =125°C
j
I =I
F
j
= 125°C)
F(AV)
F
450
F
5/11
/dt
125
500