MBR20H100CTG ON Semiconductor, MBR20H100CTG Datasheet - Page 5

• Manufacturer Part Number: MBR20H100CTG
• Description: DIODE SCHOTTKY 10A 100V TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR20H100CTG

• Voltage - Forward (vf) (max) @ If: 770mV @ 10A
• Current - Reverse Leakage @ Vr: 4.5µA @ 100V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Current If(av): 10A
• Forward Voltage Vf Max: 730mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

Figure 11 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
up linearly; and energy is stored in the coil. At t
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BV
which now starts to decay linearly through the diode, and
goes to zero at t
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the V
breakdown (from t
component resistances. Assuming the component resistive
The unclamped inductive switching circuit shown in
When S
By solving the loop equation at the point in time when S
0.001
DUT
0.01
0.000001
0.1
10
1
and the diode begins to conduct the full load current
0.05
0.01
D = 0.5
0.2
0.1
SINGLE PULSE
1
MERCURY
SWITCH
is closed at t
2
S
.
1
0.00001
Figure 11. Test Circuit
1
DD
to t
0
power supply while the diode is in
the current in the inductor I
Figure 10. Thermal Response Junction−to−Case for MBRF20H100CT
2
I
) minus any losses due to finite
L
0.0001
+V
10 mH COIL
DUT
DD
I
D
0.001
1
V
the switch
D
L
http://onsemi.com
ramps
t
1
0.01
, TIME (sec)
1
5
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the V
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S
Equation (2).
0.1
W
t
W
EQUATION (1):
EQUATION (2):
0
AVAL
AVAL
Figure 12. Current−Voltage Waveforms
[ 1
[ 1
2
2
1
I
LI
LI
L
2
LPK
2
LPK
DD
voltage is low compared to the
BV
10
BV
DUT
DUT
P
t
DUTY CYCLE, D = t
1
(pk)
V
DD
BV
DUT
I
D
100
t
1
1
t
2
was closed,
t
2
1
V
/t
DD
2
1000
t