MBRB2535CTLT4G ON Semiconductor, MBRB2535CTLT4G Datasheet - Page 2

• Manufacturer Part Number: MBRB2535CTLT4G
• Description: DIODE SCHOTTKY 35V 12.5A D2PAK
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBRB2535CTLT4G

• Voltage - Forward (vf) (max) @ If: 470mV @ 12.5A
• Current - Reverse Leakage @ Vr: 10mA @ 35V
• Current - Average Rectified (io) (per Diode): 12.5A
• Voltage - Dc Reverse (vr) (max): 35V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Schottky Diodes
• Peak Reverse Voltage: 35 V
• Forward Continuous Current: 12.5 A
• Max Surge Current: 150 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.55 V @ 25 A
• Maximum Reverse Leakage Current: 10000 uA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRB2535CTLT4GOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. When mounted using minimum recommended pad size on FR−4 board.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Rectified Forward Current, (Rated V
Peak Repetitive Forward Current, (Rated V
Non−Repetitive Peak Surge Current
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature
Voltage Rate of Change (Rated V
Thermal Resistance,
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current (Note 2)
Working Peak Reverse Voltage
DC Blocking Voltage
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
(i
(i
(i
(Rated dc Voltage, T
(Rated dc Voltage, T
F
F
F
= 25 A, T
= 12.5 A, T
= 12.5 A, T
J
= 25°C)
J
J
= 125°C)
= 25°C)
J
J
(Per Leg)
= 125°C)
= 25°C)
Junction−to−Ambient (Note 1)
Junction−to−Case
R
Characteristic
)
(Per Leg)
Rating
(Per Leg)
R
, Square Wave, 20 kHz, T
R
, T
C
= 110°C)
MBRB2535CTL
http://onsemi.com
2
C
= 90°C)
Symbol
Symbol
V
V
I
dv/dt
R
I
I
R
I
F(AV)
RRM
T
FRM
FSM
RWM
RRM
V
T
v
I
qJC
stg
qJA
R
F
R
J
−65 to +150
−65 to +125
10,000
Value
Value
12.5
0.55
0.41
0.47
150
500
1.0
1.0
35
25
84
10
°C/W
Unit
V/ms
Unit
mA
°C
°C
V
A
A
A
A
V