MMBD7000 Fairchild Semiconductor, MMBD7000 Datasheet
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MMBD7000
Manufacturer Part Number
MMBD7000
Description
DIODE ULTRAFAST HI COND SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBD7000.pdf
(2 pages)
Specifications of MMBD7000
Voltage - Forward (vf) (max) @ If
1.1V @ 100mA
Current - Reverse Leakage @ Vr
500nA @ 100V
Current - Average Rectified (io) (per Diode)
200mA
Voltage - Dc Reverse (vr) (max)
100V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Series
Reverse Voltage
100 V
Forward Voltage Drop
1.1 V @ 0.1 A
Recovery Time
4 ns
Forward Continuous Current
0.2 A
Max Surge Current
2 A
Reverse Current Ir
0.5 uA
Power Dissipation
0.35 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBD7000FSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBD7000
Manufacturer:
Fairchild Semiconductor
Quantity:
6
Part Number:
MMBD7000
Manufacturer:
SECOS
Quantity:
20 000
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Quantity:
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Part Number:
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Manufacturer:
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Quantity:
339 237
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Part Number:
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Manufacturer:
DIODES
Quantity:
4 820
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Part Number:
MMBD7000-7-F
Manufacturer:
SONY
Quantity:
19
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MMBD7000-7-F
Manufacturer:
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Quantity:
20 000
Part Number:
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Manufacturer:
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20 000
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Manufacturer:
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20 000
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Part Number:
MMBD7000-TP
Manufacturer:
Micro Commercial Co
Quantity:
204 708
2001 Fairchild Semiconductor Corporation
Symbol
Symbol
Small signal Diode
Electrical Characteristics
Absolute Maximum Ratings*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
*
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V
I
I
T
T
P
R
V
V
I
C
t
F(AV)
FSM
R
rr
stg
J
RRM
D
R
F
T
JA
3
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
SOT-23
1
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
2
Parameter
Parameter
T
MMBD7000
A
= 25°C unless otherwise noted
T
A
= 25°C unless otherwise noted
1
I
I
I
I
V
V
V
V
I
R
R
F
F
F
F
5C
R
R
R
R
L
= 1.0 mA
= 10 mA
= 100 mA
= I
= 100 A
= 100 V
= 50 V
= 50 V, T
= 0, f = 1.0 MHz
= 100
3
Test Conditions
R
= 10 mA, I
2
A
= 125 C
RR
= 1.0 mA,
Connection Diagram
-55 to +150
Min
0.75
100
550
670
Value
Value
1
100
200
150
350
357
1.0
2.0
3
Max
2
700
820
500
300
100
1.1
1.5
4.0
Units
Units
Units
mW
mA
C/W
MMBD7000, Rev. D
V
A
A
C
C
mV
mV
nA
nA
pF
ns
V
V
A
Related parts for MMBD7000
MMBD7000 Summary of contents
Page 1
... 100 100 125 1.0 MHz mA 1.0 mA 100 L Connection Diagram Value Units 100 V 200 mA 1.0 A 2.0 A -55 to +150 C 150 C Value Units 350 mW 357 C/W Min Max Units V 100 550 700 mV 670 820 mV 0.75 1.1 V 500 nA 300 nA 100 A 1.5 pF 4.0 ns MMBD7000, Rev. D ...
Page 2
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...