BAV23S Fairchild Semiconductor, BAV23S Datasheet
BAV23S
Manufacturer Part Number
BAV23S
Description
DIODE SS 250V 200MA SOT23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BAV23S.pdf
(5 pages)
Specifications of BAV23S
Voltage - Forward (vf) (max) @ If
1.2V @ 200mA
Current - Reverse Leakage @ Vr
100nA @ 250V
Current - Average Rectified (io) (per Diode)
200mA
Voltage - Dc Reverse (vr) (max)
250V
Reverse Recovery Time (trr)
50ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Series
Reverse Voltage
250 V
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
0.2 A
Max Surge Current
9 A
Reverse Current Ir
0.1 uA
Power Dissipation
0.35 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Rectifier Type
Small Signal Switching Diode
Peak Rep Rev Volt
250V
Avg. Forward Curr (max)
0.2A
Rev Curr
0.1uA
Peak Non-repetitive Surge Current (max)
9A
Forward Voltage
1.25V
Operating Temp Range
-55C to 150C
Package Type
SOT-23
Rev Recov Time
50ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAV23SFSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAV23S
Manufacturer:
PHILIPS
Quantity:
2 800
Company:
Part Number:
BAV23S
Manufacturer:
NXP
Quantity:
51 000
Company:
Part Number:
BAV23S
Manufacturer:
NXP
Quantity:
18 000
Part Number:
BAV23S
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BAV23S-7-F
Manufacturer:
DIODES
Quantity:
6 400
Company:
Part Number:
BAV23S-7-F
Manufacturer:
MOLEX
Quantity:
32 161
Part Number:
BAV23S-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
BAV23SE
Manufacturer:
ST/先科
Quantity:
20 000
©2006 Fairchild Semiconductor Corporation
BAV23S Rev. E
BAV23S
Small Signal Diode
Absolute Maximum Ratings *
*
Thermal Characteristics
Electrical Characteristics
V
I
I
T
T
P
R
V
V
I
t
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
F(AV)
FSM
R
rr
STG
J
RRM
D
R
F
Symbol
Symbol
θJA
Symbol
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient*
Breakdown Voltage
Forward Voltage
Reverse Leakage
Reverse Recovery Time
3
SOT-23
1
Parameter
Pulse Width = 1.0 microsecond
Pulse Width = 100 microsecond
2
Parameter
Parameter
T
C
= 25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
I
I
I
V
V
I
R
R
F
F
F
R
R
L
= 100mA
= 200mA
= I
= 100µA
= 100Ω
= 250V
= 250V, T
1
R
L30
= 30mA, I
Conditions
3
A
1
2
= 150°C
RR
= 3.0mA,
Min.
250
-55 to +150
Connection Diagram
Value
Value
250
200
150
350
357
9.0
3.0
1
Max
1.25
100
100
1.0
50
3
2
September 2006
www.fairchildsemi.com
Units
Unit
Unit
°C/W
mW
mA
°C
°C
nA
µA
ns
V
A
A
V
V
V
tm
Related parts for BAV23S
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
BAV23S Summary of contents
Page 1
... Thermal Resistance, Junction to Ambient* θJA Electrical Characteristics Symbol Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Leakage R t Reverse Recovery Time rr ©2006 Fairchild Semiconductor Corporation BAV23S Rev L30 25°C unless otherwise noted a Parameter Parameter T = 25°C unless otherwise noted C Conditions I = 100µ ...
Page 2
... Typical Performance Characteristics BAV23S Rev www.fairchildsemi.com ...
Page 3
... Typical Performance Characteristics 400 300 200 100 IEN T TEM Figure 9. Power Derating Curve Figure 11. Reverse Recovery Time vs Reverse Recovery Current (Irr) BAV23S Rev. E (Continued) 300 250 200 150 100 100 125 150 Figure 10. Average Rectified Current 100 125 AMBIENT TEMPERATURE ( Ambient Temperature(T ...
Page 4
... Mechanical Dimensions BAV23S Rev. E SOT-23 4 www.fairchildsemi.com ...
Page 5
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete BAV23S Rev. E OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ ...