FYP1004DNTU Fairchild Semiconductor, FYP1004DNTU Datasheet
FYP1004DNTU
Manufacturer Part Number
FYP1004DNTU
Description
DIODE SCHOTTKY 40V 10A TO-220
Manufacturer
Fairchild Semiconductor
Datasheet
1.FYP1004DNTU.pdf
(4 pages)
Specifications of FYP1004DNTU
Voltage - Forward (vf) (max) @ If
670mV @ 10A
Current - Reverse Leakage @ Vr
1mA @ 40V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
40V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
10 A
Max Surge Current
80 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.67 V
Maximum Reverse Leakage Current
1000 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FYP1004DNTU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2001 Fairchild Semiconductor Corporation
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings
Thermal Characteristics
Electrical Characteristics
* Pulse Test: Pulse Width=300 s, Duty Cycle 2%
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Applications
• Switched mode power supply
• Freewheeling diodes
V
V
I
I
T
R
V
I
F(AV)
FSM
RM
J,
RRM
R
FM
JC
Symbol
Symbol
Symbol
T
STG
*
*
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current (per diode)
Operating Junction and Storage Temperature
Maximum Thermal Resistance, Junction to Case (per diode)
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Reverse Current
60Hz Single Half-Sine Wave
I
I
I
I
@ rated V
F
F
F
F
= 5A
= 5A
= 10A
= 10A
(per diode)
Parameter
Parameter
Parameter
T
R
C
=25 C unless otherwise noted
FYP1004DN
1 2 3
@ T
C
T
T
T
T
T
T
= 137 C
C
C
C
C
C
C
TO-220
= 25 C
= 125 C
= 25 C
= 125 C
= 25 C
= 125 C
1. Anode 2.Cathode 3. Anode
-65 to +150
Value
Value
Value
0.55
0.49
0.67
0.65
3.0
40
40
10
80
40
1
Units
Units
Units
Rev. A, March 2001
C/W
mA
V
V
A
A
V
C
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FYP1004DNTU Summary of contents
Page 1
... Maximum Thermal Resistance, Junction to Case (per diode) JC Electrical Characteristics Symbol V Maximum Instantaneous Forward Voltage * FM I Maximum Instantaneous Reverse Current * RM * Pulse Test: Pulse Width=300 s, Duty Cycle 2% ©2001 Fairchild Semiconductor Corporation FYP1004DN TO-220 =25 C unless otherwise noted C Parameter @ T = 137 C C 60Hz Single Half-Sine Wave Parameter ...
Page 2
... Reverse Voltage, V Figure 3. Typical Junction Capacitance (per diode Square Wave 2 Duty Cycle=0 100 Case Temperature, T Figure 5. Forward Current Derating Curve ©2001 Fairchild Semiconductor Corporation 100 10 1 0.1 0.01 0.001 0 1.0 1.5 [V] F Figure 2. Typical Reverse Current vs. Reverse Voltage (per diode = 100µ ...
Page 3
... Package Demensions 1.27 2.54TYP [2.54 ©2001 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, March 2001 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ HiSeC™ ...