FYPF1010DNTU Fairchild Semiconductor, FYPF1010DNTU Datasheet
FYPF1010DNTU
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FYPF1010DNTU Summary of contents
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... Maximum Thermal Resistance, Junction to Case (per diode) JC Electrical Characteristics Symbol V Maximum Instantaneous Forward Voltage * FM I Maximum Instantaneous Reverse Current * RM * Pulse Test: Pulse Width=300 s, Duty Cycle 2% ©2001 Fairchild Semiconductor Corporation FYPF1010DN TO-220F =25 C unless otherwise noted C Parameter @ T = 125 C C 60Hz Single Half-Sine Wave ...
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... Figure 1. Typical Forward Voltage Characteristics (per diode) 100 Reverse Voltage, V Figure 3. Typical Junction Capacitance (per diode 100 Case Temperature, T Figure 5. Forward Current Derating Curve ©2001 Fairchild Semiconductor Corporation 100 10 1 0.1 0.01 0.001 [V] F Figure 2. Typical Reverse Current vs. Reverse Voltage (per diode = 100 100µ [V] R Figure 4 ...
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... Package Dimensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2001 Fairchild Semiconductor Corporation TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. B, November 2001 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...