FEP16DT-E3/45 Vishay, FEP16DT-E3/45 Datasheet

Page 1

... RRM 105 RMS V 50 100 150 DC I F(AV) I 200 FSM STG V AC Vishay General Semiconductor FEP FEP FEP FEP FEP 16DT 16FT 16GT 16HT 16JT 200 300 400 500 600 140 210 280 350 420 200 300 400 500 ...

Page 2

... FEP(F,B)16AT thru FEP(F,B)16JT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum instantaneous 8.0 A (1) forward voltage per diode Maximum DC reverse current per diode at rated DC blocking voltage Maximum reverse recovery time per diode Typical junction capacitance 4 MHz per diode Note: (1) Pulse test: 300 µ ...

Page 3

... Figure 4. Typical Reverse Characteristics Per Diode 1000 100 10 0.1 100 Figure 5. Typical Junction Capacitance Per Diode ° 400 V 300 - 400 V 500 - 600 V 1.6 1.8 2.0 Vishay General Semiconductor T = 125 ° 400 V J 500 - 600 100 ° ° Percent of Rated Peak Reverse Voltage (%) T = 125 ° ...

Page 4

... FEP(F,B)16AT thru FEP(F,B)16JT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) 0.160 (4.06) 1 ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...