FEPB6BT-E3/81 Vishay, FEPB6BT-E3/81 Datasheet - Page 3
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FEPB6BT-E3/81
Manufacturer Part Number
FEPB6BT-E3/81
Description
DIODE 6A 100V 35NS DUAL TO263AB
Manufacturer
Vishay
Datasheet
1.FEP6AT-E345.pdf
(5 pages)
Specifications of FEPB6BT-E3/81
Voltage - Forward (vf) (max) @ If
975mV @ 3A
Current - Reverse Leakage @ Vr
5µA @ 100V
Current - Average Rectified (io) (per Diode)
6A
Voltage - Dc Reverse (vr) (max)
100V
Reverse Recovery Time (trr)
35ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
100 V
Forward Voltage Drop
0.975 V at 3 A
Recovery Time
35 ns
Forward Continuous Current
6 A
Max Surge Current
75 A
Reverse Current Ir
5 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88598
Revision: 07-Nov-07
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
A
= 25 °C unless otherwise noted)
100
0.1
Figure 1. Maximum Forward Current Derating Curve
10
80
70
60
50
40
30
20
10
10
8
6
4
2
0
0
1
0.4
0
1
0.6
25
Instantaneous Forward Voltage (V)
T
J
Number of Cycles at 60 Hz
= 125 °C
0.8
Case Temperature (°C)
50
Per Diode
1.0
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Resistive or Inductive Load
T
Pulse Width = 300 µs
1 % Duty Cycle
For technical questions within your region, please contact one of the following:
75
10
J
= 25 °C
1.2
100
1.4
125
1.6
150
100
1.8
FEP(F,B)6AT thru FEP(F,B)6DT
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
100
0.1
10
60
50
40
30
20
10
0
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
0
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
20
Reverse Voltage (V)
1
40
T
J
= 125 °C
T
J
T
= 25 °C
J
= 100 °C
60
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
80
www.vishay.com
100
100
3