MBR1550CT Fairchild Semiconductor, MBR1550CT Datasheet
MBR1550CT
Manufacturer Part Number
MBR1550CT
Description
DIODE SCHOTTKY 15A 50V TO-220AB
Manufacturer
Fairchild Semiconductor
Datasheet
1.MBR1560CT.pdf
(3 pages)
Specifications of MBR1550CT
Voltage - Forward (vf) (max) @ If
750mV @ 7.5A
Current - Reverse Leakage @ Vr
1mA @ 50V
Current - Average Rectified (io) (per Diode)
15A
Voltage - Dc Reverse (vr) (max)
50V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR1550CT
Manufacturer:
GS
Quantity:
10 000
2001 Fairchild Semiconductor Corporation
Features
•
•
•
•
•
•
Schottky Rectifiers
Absolute Maximum Ratings*
*
Thermal Characteristics
Electrical Characteristics
Symbol
Symbol
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
P
R
R
V
I
I
T
T
V
I
I
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guarding for over voltage protection.
F(AV)
FSM
R
RRM
D
stg
J
RRM
JA
JL
F
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Forward Voltage I
Reverse Current @ rated V
Peak Repetitive Reverse Surge Current
8.3 ms Single Half-Sine-Wave
2.0 us Pulse Width, f = 1.0 KHz
.375 " lead length @ T
MBR1535CT - MBR1560CT
I
I
I
F =
F =
F =
F =
7.5 A, T
7.5 A, T
15 A, T
15 A, T
Parameter
Parameter
Parameter
R
C
C
A
C
C
T
= 25 C
= 125 C
T
= 105 C
1
= 25 C
T
= 125 C
A
A
A
2
= 125 C
= 25°C unless otherwise noted
= 25 C
3
T
A
= 25°C unless otherwise noted
TO-220AB
1535
1535
35
0.57
0.84
0.72
0.1
1.0
15
-
1545
1545
-65 to +175
-65 to +150
45
Device
Value
Value
41.7
150
PIN 1
PIN 3
3.0
60
15
1550
1550
50
0.75
0.65
1.0
0.5
50
MBR1535CT - MBR1560CT, Rev. C
-
-
1560
1560
CASE
PIN 2
60
+
Units
Units
Units
C/W
C/W
mA
mA
W
V
A
A
V
V
V
V
A
C
C
Related parts for MBR1550CT
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
MBR1550CT Summary of contents
Page 1
... Electrical Characteristics Symbol V Forward Voltage I 7 Reverse Current @ rated Peak Repetitive Reverse Surge Current RRM 2.0 us Pulse Width 1.0 KHz 2001 Fairchild Semiconductor Corporation TO-220AB T = 25°C unless otherwise noted A Parameter = 105 C A Parameter T = 25°C unless otherwise noted A Parameter = 7 125 C ...
Page 2
... Percent of Rated Peak Reverse Voltage [%] F Figure 4. Reverse Current vs Reverse Voltage 100 10 1 0.1 10 100 0.01 [V] R Figure 6. Thermal Impedance Characteristics Schottky Rectifier (continued Number of Cycles at 60Hz º 125 C A º º MBR1535CT-MBR1545CT MBR1550CT-MBR1560CT 100 120 0 Pulse Duration [s] MBR1535CT - MBR1560CT, Rev. C 100 140 100 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...