MBR20H100CT-E3/45 Vishay, MBR20H100CT-E3/45 Datasheet

DIODE SCHOTT 20A 100V DUAL TO220

MBR20H100CT-E3/45

Manufacturer Part Number
MBR20H100CT-E3/45
Description
DIODE SCHOTT 20A 100V DUAL TO220
Manufacturer
Vishay
Datasheet

Specifications of MBR20H100CT-E3/45

Voltage - Forward (vf) (max) @ If
840mV @ 20A
Current - Reverse Leakage @ Vr
100µA @ 100V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Schottky Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
20 A
Max Surge Current
250 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.88 V
Maximum Reverse Leakage Current
4.5 uA
Operating Temperature Range
- 65 C to + 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBR20H100CT-E3/45
Manufacturer:
Vishay Semiconductors
Quantity:
135
Document Number: 88673
Revision: 08-Nov-07
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Peak repetitive reverse current per diode at t
Voltage rate of change (rated V
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
MBR20H90CT
MBR20H100CT
PIN 1
PIN 3
TO-220AB
Dual Common-Cathode High-Voltage Schottky Rectifier
T
V
I
J
I
F(AV)
FSM
RRM
V
max.
I
R
F
High Barrier Technology for Improved High Temperature Performance
PIN 2
CASE
1
K
PIN 2
MBRB20H90CT
MBRB20H100CT
PIN 1
TO-263AB
2
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
3
For technical questions within your region, please contact one of the following:
R
)
A
1
= 25 °C unless otherwise noted)
HEATSINK
2
MBRF20H90CT
MBRF20H100CT
PIN 1
K
PIN 3
ITO-220AB
90 V, 100 V
10 A x 2
p
175 °C
4.5 µA
0.64 V
250 A
= 2 µs, 1 kHz
total device
per diode
MBR(F,B)20H90CT & MBR(F,B)20H100CT
PIN 2
1
2
3
SYMBOL
T
V
V
J
I
dV/dt
I
I
V
F(AV)
, T
V
RRM
RWM
FSM
RRM
DC
AC
STG
FEATURES
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder dip 260 °C, 40 s (for TO-220AB and
• Component in accordance to RoHS 2002/95/EC
peak of 245 °C (for TO-263AB package)
ITO-220AB package)
and WEEE 2002/96/EC
MBR20H90CT
Vishay General Semiconductor
90
90
90
- 65 to + 175
10 000
1500
250
1.0
20
10
MBR20H100CT
100
100
100
www.vishay.com
UNIT
V/µs
°C
V
V
V
A
A
A
V
1

Related parts for MBR20H100CT-E3/45

MBR20H100CT-E3/45 Summary of contents

Page 1

... Polarity: As marked Mounting Torque: 10 in-lbs maximum SYMBOL V RRM V RWM V DC total device I F(AV) per diode I FSM = 2 µs, 1 kHz I p RRM dV/ STG V AC Vishay General Semiconductor MBR20H90CT MBR20H100CT 90 100 90 100 90 100 20 10 250 1.0 10 000 - 175 1500 www.vishay.com UNIT V/µs ° ...

Page 2

... Maximum reverse current per diode at working peak reverse voltage Note: (1) Pulse test: 300 µs pulse width duty cycle THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB MBR20H100CT-E3/45 ITO-220AB MBRF20H100CT-E3/45 TO-263AB MBRB20H100CT-E3/45 TO-263AB MBRB20H100CT-E3/81 TO-220AB MBR20H100CTHE3/45 ITO-220AB MBRF20H100CTHE3/45 ...

Page 3

... J 0. Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Characteristics Per Diode Document Number: 88673 For technical questions within your region, please contact one of the following: Revision: 08-Nov-07 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com MBR(F,B)20H90CT & MBR(F,B)20H100CT 10 000 T = 125 °C J 1000 100 10 0.8 0.9 1 ...

Page 4

... MBR(F,B)20H90CT & MBR(F,B)20H100CT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) 0.160 (4.06) 1 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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