MBR2090CT-E3/4W Vishay, MBR2090CT-E3/4W Datasheet - Page 3

• Manufacturer Part Number: MBR2090CT-E3/4W
• Description: DIODE SCHOT 20A 90V DUAL TO220-3
• Manufacturer: Vishay

Specifications of MBR2090CT-E3/4W

• Voltage - Forward (vf) (max) @ If: 840mV @ 20A
• Current - Reverse Leakage @ Vr: 100µA @ 90V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 90V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Schottky Diodes
• Peak Reverse Voltage: 90 V
• Forward Continuous Current: 20 A
• Max Surge Current: 250 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.88 V
• Maximum Reverse Leakage Current: 4.5 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 89033
Revision: 24-Jun-09
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
10 000
0.001
1000
0.01
0.01
100
100
100
0.1
0.1
10
10
10
Figure 4. Typical Reverse Characteristics Per Diode
1
1
Figure 5. Typical Junction Capacitance Per Diode
10
0
1
Percent of Rated Peak Reverse Voltage (%)
0.1
T
20
J
= 125 °C
Instantaneous Forward Voltage (V)
0.2
30
0.3
Reverse Voltage (V)
40
T
T
J
J
0.4
T
= 25 °C
= 150 °C
J
50
= 150 °C
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0.5
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10
T
J
60
= 125 °C
0.6
T
J
70
= 25 °C
0.7
T
f = 1 MHz
V
J
sig
= 25 °C
80
= 50 mVp-p
0.8
90
0.9
100
100
1.0
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MBR(F,B)2090CT & MBR(F,B)20100CT
Figure 6. Typical Transient Thermal Impedance Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
0.001
0.01
100
0.1
0.1
10
10
1
1
0.01
0.1
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Vishay General Semiconductor
0.1
t - Pulse Duration (s)
t - Pulse Duration (s)
1
1
Junction to Case
Junction to Case
10
10
MBRF
MBR(B)
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100
100
3