MBR3035PT-E3/45 Vishay, MBR3035PT-E3/45 Datasheet - Page 3

DIODE SCHOT 30A 35V DUAL TO220-3

MBR3035PT-E3/45

Manufacturer Part Number
MBR3035PT-E3/45
Description
DIODE SCHOT 30A 35V DUAL TO220-3
Manufacturer
Vishay
Datasheet

Specifications of MBR3035PT-E3/45

Diode Configuration
1 Pair Common Cathode
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
760mV @ 30A
Current - Reverse Leakage @ Vr
1mA @ 35V
Current - Average Rectified (io) (per Diode)
15A
Voltage - Dc Reverse (vr) (max)
35V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
TO-220AB
Product
Schottky Rectifiers
Peak Reverse Voltage
35 V
Forward Continuous Current
30 A
Max Surge Current
200 A
Configuration
Dual
Forward Voltage Drop
0.6 V
Maximum Reverse Leakage Current
5 mA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Repetitive Reverse Voltage Vrrm Max
35V
Forward Current If(av)
30A
Forward Voltage Vf Max
760mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBR3035PT-E3/45
Manufacturer:
VISHAY/威世
Quantity:
20 000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88676
Revision: 07-May-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0.001
0.01
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
1
1
0
0
Percent of Rated Peak Reverse Voltage (%)
0.1
T
Instantaneous Forward Voltage (V)
J
0.2
20
= 150 °C
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
0.3
T
J
0.4
40
= 125 °C
T
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
J
0.5
For technical questions within your region, please contact one of the following:
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
= 75 °C
T
J
0.6
60
= 25 °C
0.795 (20.2)
0.820 (20.8)
0.775 (19.6)
0.840 (21.3)
T
J
0.7
= 25 °C
0.225 (5.7)
0.245 (6.2)
0.140 (3.5)
0.160 (4.1)
0.8
0.225 (5.7)
0.205 (5.2)
80
0.9
1
0.645 (16.4)
0.625 (15.9)
100
1.0
2
TO-247AD (TO-3P)
3
PIN 1
PIN 3
0.323 (8.2)
0.313 (7.9)
0.048 (1.22)
0.044 (1.12)
0.142 (3.6)
0.138 (3.5)
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.117 (2.97)
0.170
(4.3)
PIN 2
CASE
10° TYP.
Both Sides
0.203 (5.16)
0.193 (4.90)
0.030 (0.76)
0.020 (0.51)
0.118 (3.0)
0.108 (2.7)
MBR3035PT thru MBR3060PT
10 000
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
30°
100
100
0.1
10
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
Vishay General Semiconductor
0.078 (1.98) REF.
10
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
0.1
1° REF.
Both Sides
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
www.vishay.com
100
100
3

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