VB60100C-E3/4W Vishay, VB60100C-E3/4W Datasheet - Page 3

• Manufacturer Part Number: VB60100C-E3/4W
• Description: DIODE 40A 100V DUAL SCHOTTKY
• Manufacturer: Vishay

Specifications of VB60100C-E3/4W

• Voltage - Forward (vf) (max) @ If: 790mV @ 30A
• Current - Reverse Leakage @ Vr: 1mA @ 100V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 60 A
• Max Surge Current: 320 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.79 V @ 30 A
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: - 40 C to + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Document Number: 88942
Revision: 24-Jun-09
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0.001
1000
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
1
1
10
0
Percent of Rated Peak Reverse Voltage (%)
20
T
A
= 125 °C
Instantaneous Forward Voltage (V)
0.2
30
T
A
T
A
T
= 150 °C
T
A
= 125 °C
A
T
40
= 100 °C
A
= 150 °C
T
= 25 °C
0.4
A
= 25 °C
50
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T
60
A
= 100 °C
0.6
70
80
0.8
90
100
1
New Product
10 000
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
100
0.1
10
1
Figure 5. Typical Junction Capacitance Per Diode
0.01
0.1
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Vishay General Semiconductor
V60100C & VB60100C
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
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100
100
3