FFH30US30DN Fairchild Semiconductor, FFH30US30DN Datasheet - Page 4

• Manufacturer Part Number: FFH30US30DN
• Description: DIODE DUAL 300V TO-247
• Manufacturer: Fairchild Semiconductor
• Series: Stealth™r

Specifications of FFH30US30DN

• Voltage - Forward (vf) (max) @ If: 1V @ 30A
• Current - Reverse Leakage @ Vr: 100µA @ 300V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 55ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Performance Curves (per leg)
Figure 9. Junction Capacitance vs Reverse Voltage
Figure 7. Reverse Recovery Softness Factor vs
1600
1400
1200
1000
0.8
0.7
0.6
0.5
0.4
0.3
0.2
800
600
400
200
0
0.03
0
V
R
= 195V, T
0.1
dI
200
F
I
/dt, CURRENT RATE OF CHANGE (A/µs)
F
C
= 60A, 30A, 15A
= 125
V
R
400
, REVERSE VOLTAGE (V)
o
C
dI
F
1
/dt
600
Figure 11.
35
30
25
20
15
10
5
0
800
158
10
160
1000
f = 1MHZ
162
DC CURRENT DERATING CURVE
T
C
, CASE TEMPERATURE (
1200
100
164
(Continued)
166
Figure 10. Maximum Reverse Recovery Current
168
Figure 8. Reverse Recovery Charge vs dI
-12
-14
-16
-18
-20
-22
-24
-26
-28
1.4
1.2
1.0
0.8
0.6
0.4
0.2
25
200
170
V
I
F
o
R
C)
= 30A, V
= 195V, T
172
and t
50
dI
I
RM(REC)
F
400
t
/dt, CURRENT RATE OF CHANGE (A/µs)
T
R
RR
174
C
rr
C
= 195V, dI
, CASE TEMPERATURE (
= 125
vs Case Temperature
75
176
o
C
600
F
/dt = 600A/usec
100
I
F
= 60A
800
125
I
o
F
C)
= 30A
150
1000
FFH30US30DN Rev. A1
I
F
= 15A
175
F
/dt
70
65
60
55
50
45
40
35
30
1200