BAV99,215 NXP Semiconductors, BAV99,215 Datasheet - Page 2

• Manufacturer Part Number: BAV99,215
• Description: DIODE SW DBL 75V 215MA HS SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAV99,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 0.215A
• Rev Curr: 0.5uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.25V
• Operating Temp Range: -65C to 150C
• Package Type: TO-236AB
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1624-2; 933215370215; BAV99 T/R

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
The BAV99 consists of two
high-speed switching diodes
connected in series, fabricated in
planar technology, and encapsulated
in the small SOT23 plastic SMD
package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
2001 Oct 15
Per diode
V
V
I
I
I
P
T
T
F
FRM
FSM
SYMBOL
stg
j
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 450 mA.
High-speed switching in thick and
thin-film circuits.
RRM
R
tot
High-speed double diode
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
PARAMETER
MARKING
Note
1.
TYPE NUMBER
= p: Made in Hong Kong.
= t: Made in Malaysia.
= W: Made in China.
BAV99
handbook, halfpage
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
square wave; T
surge; see Fig.4
T
amb
t = 1 s
t = 1 ms
t = 1 s
Fig.1 Simplified outline (SOT23) and symbol.
= 25 C; note 1
2
CONDITIONS
2
MARKING
CODE
A7
j
= 25 C prior to
3
(1)
1
PINNING
2
PIN
1
2
3
65
MIN.
3
Product specification
anode
cathode
common connection
85
75
215
125
450
4
1
0.5
250
+150
150
DESCRIPTION
MAX.
MAM232
1
BAV99
V
V
mA
mA
mA
A
A
A
mW
C
C
UNIT