BAV99,215 NXP Semiconductors, BAV99,215 Datasheet - Page 3

• Manufacturer Part Number: BAV99,215
• Description: DIODE SW DBL 75V 215MA HS SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAV99,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 0.215A
• Rev Curr: 0.5uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.25V
• Operating Temp Range: -65C to 150C
• Package Type: TO-236AB
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1624-2; 933215370215; BAV99 T/R

NXP Semiconductors
5. Limiting values
BAV99_SER
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
Symbol
Per diode
V
V
I
I
I
P
T
T
Per device
T
F
FRM
FSM
j
amb
stg
RRM
R
tot
Single diode loaded.
Double diode loaded.
T
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Soldering points at pins 2, 3, 5 and 6.
j
= 25 °C prior to surge.
Limiting values
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak
forward current
total power dissipation
junction temperature
ambient temperature
storage temperature
BAV99
BAV99S
BAV99W
BAV99
BAV99S
BAV99W
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 November 2010
Conditions
square wave
T
T
T
amb
sp
amb
t
t
t
p
p
p
≤ 85 °C
= 1 μs
= 1 ms
= 1 s
≤ 25 °C
≤ 25 °C
[1][4]
High-speed switching diodes
[1]
[2]
[1]
[1]
[2]
[3]
[5]
BAV99 series
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
−65
−65
© NXP B.V. 2010. All rights reserved.
Max
100
100
215
125
200
150
130
500
4
1
0.5
250
250
200
150
+150
+150
Unit
V
V
mA
mA
mA
mA
mA
mA
A
A
A
mW
mW
mW
°C
°C
°C
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