BAW56-G Comchip Technology, BAW56-G Datasheet - Page 2
![DIODE SWITCH CA 215MA 70V SOT23](/photos/5/31/53192/baw56-g_sml.jpg)
BAW56-G
Manufacturer Part Number
BAW56-G
Description
DIODE SWITCH CA 215MA 70V SOT23
Manufacturer
Comchip Technology
Datasheet
1.BAV99-G.pdf
(2 pages)
Specifications of BAW56-G
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
2.5µA @ 70V
Current - Average Rectified (io) (per Diode)
215mA (DC)
Voltage - Dc Reverse (vr) (max)
70V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Anode
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
641-1323-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAW56-GS08
Manufacturer:
MCL
Quantity:
13 240
+10 V
MDS0210001A
Surface Mount Switching Diode
100
1.0
0.1
10
50 Ω Output
Generator
0.2
Pulse
820 Ω
0.1 µF
0.4
RATING AND CHARACTERISTIC CURVES (BAV99 Thru BAW56)
Figure 2. Forward Voltage
2.0 k
100 µH
T A = 85°C
V F , Forward Voltage (V)
0.6
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10 mA.
Notes:
Notes:
I F
DUT
2. Input pulse is adjusted so I R(peak) is equal to 10 mA.
3. t p » t rr
T A = 25°C
0.68
0.64
0.56
0.52
0.60
0.8
Figure 1. Recovery Time Equivalent Test Circuit
0
T A = – 40°C
0.1 µF
Oscilloscopes
50 Ω Input
1.0
Sampling
2
Figure 4. Capacitance
V R , Reverse Voltage (V)
1.2
V R
4
t r
0.001
0.01
Input Signal
10%
90%
1.0
0.1
10
0
t p
6
t
10
Figure 3. Leakage Current
V R , Reverse Voltage (V)
T A = 150°C
T A = 125°C
8
I R
I F
T A = 55°C
T A = 25°C
T A = 85°C
20
COMCHIP
www.comchip.com.tw
(I F = I R = 10 mA; Measured
at I R(REC) = 1.0 mA)
30
Output Pulse
t rr
I R(REC) = 1.0 mA
40
t
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