BAS31,235 NXP Semiconductors, BAS31,235 Datasheet - Page 9

• Manufacturer Part Number: BAS31,235
• Description: DIODE AVAL SW 90V 250MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAS31,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 900mV @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 90V
• Current - Average Rectified (io) (per Diode): 250mA (DC)
• Voltage - Dc Reverse (vr) (max): 90V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Avalanche
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: General Purpose Diodes
• Peak Reverse Voltage: 110 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 10 A
• Configuration: Dual Series
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933723190235; BAS31 /T3; BAS31 /T3

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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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613514/05/pp9
Date of release: 2003 Mar 20
Document order number: 9397 750 10962