BYQ28E-200/H,127 NXP Semiconductors, BYQ28E-200/H,127 Datasheet - Page 3

• Manufacturer Part Number: BYQ28E-200/H,127
• Description: DIODE RECT UFAST 200V SOT78
• Manufacturer: NXP Semiconductors

Specifications of BYQ28E-200/H,127

• Package / Case: TO-220-3 (Straight Leads)
• Voltage - Forward (vf) (max) @ If: 1.25V @ 10A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 25ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Product: Switching Diodes
• Peak Reverse Voltage: 200 V
• Forward Continuous Current: 10 A
• Max Surge Current: 55 A
• Configuration: Dual Common Cathode
• Recovery Time: 25 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 10 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934062725127

Best t
We already know that V
(see Figure 3 and 4) and conversely the temperature is
influenced by the V
1). There is an equilibrium operating temperature at which
point the V
not have the lowest V
temperature (25 °C), they will reach the lowest equilibrium
temperature because of the best V
Figure 5).
The energy loss equations (see Table 1) explain how BYC8X-
600 has the lowest temperature rise. Energy loss in three
periods contributes to the temperture rise of the diode.
V
plays a key role in the diode switch-off period (t
plays a key role in the diode switch-on period (t
V
not be discussed further here. The common P-N theory tells us
the lower the V
be a trade-off point where V
efficiency the most. Figure 6 shows NXP PFC diodes stand at
that very point.
(°C)
ΔT
F
FR
(°C)
ΔT
plays a key role in the diode conducting period (t
is more related to the design of the application circuit, it will
41
40
39
38
37
68
66
64
62
60
58
56
54
52
50
rr
Fig 6. Temperature rise of MOSFET per part number
Fig 5. Example of the advantages of low V
to V
competitor A
competitor 1
V
t
rr
F
F
= 46 ns
and t
= 2.59 V
F
Temperature rise of MOSFET per part number
F
trade-off benefits
Temperature rise of diodes per part number
, the longer the t
rr
F
are stable. Although NXP PFC diodes do
and t
competitor B
F
competitor 2
t
V
rr
F
and shortest t
F
= 40 ns
and t
= 1.96 V
rr
due to the energy loss (see Table
F
rr
and t
vary with temperature changes
rr
competitor C
F
competitor 3
and vice versa. There must
rr
t
V
rr
to t
F
V
rr
benefit the system
= 38 ns
= 2.44 V
F
@operating temperature
at normal ambient
rr
part number
part number
trade-off (see
NXP BYC8X-600
NXP BYC8X-600
F
1
3
t
V
t
rr
and V
rr
to t
F
to t
@125 °C
= 35 ns
= 2.08 V
2
0
4
) and V
brb334
). Since
FR
brb333
to t
1
), t
FR
rr
According to previous knowledge, it is very natural to see the
results in Figure 6. The best trade-off of V
lowest operating temperature of the diode, conversely the
lowest temperature of the diode results in the shortest t
shortest t
MOSFET.
Selection for PFC diodes
There are two basic PFC operating modes: Discontinuous
Conduction Mode (DCM) and Continuous Conduction Mode
(CCM).
In DCM PFC diodes, focus must be on low V
In CCM PFC diodes, focus must be on low Q
Application and design tips
The stored charge in the PFC diode that must be extracted
during the reverse recovery phase (Q
MOSFET, especially in Continuous Conduction Mode. If the
MOSFET runs too hot, it could mistakenly be replaced with a
higher current type when in many circumstances it would be
better to replace the PFC diode with a lower stored charge
type.
The stored charge in a PFC diode approximately doubles with
every 75 °C of temperature rise and this doubled charge will
subsequently double the amount of related power loss in the
MOSFET. Consequently, it is a good idea to keep the
temperature of the PFC diode as low as possible e.g. by
preventing a thermal path from the MOSFET (which may run
hot) to the PFC diode.
rr
means the least energy dissipation through the
r
) causes dissipation in the
Date of release: May 2009
F
to t
F
r
.
(t
rr
rr
leads to the
).
rr
. The