BYV42EB-200,118 NXP Semiconductors, BYV42EB-200,118 Datasheet - Page 2
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BYV42EB-200,118
Manufacturer Part Number
BYV42EB-200,118
Description
DIODE RECT 200V 15A D2PAK
Manufacturer
NXP Semiconductors
Datasheet
1.BYV42E-150127.pdf
(7 pages)
Specifications of BYV42EB-200,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Voltage - Forward (vf) (max) @ If
1.2V @ 30A
Current - Reverse Leakage @ Vr
100µA @ 200V
Current - Average Rectified (io) (per Diode)
15A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
28ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
1.2 V
Recovery Time
28 ns
Forward Continuous Current
30 A
Max Surge Current
160 A
Reverse Current Ir
100 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934041920118
BYV42EB-200 /T3
BYV42EB-200 /T3
BYV42EB-200 /T3
BYV42EB-200 /T3
Philips Semiconductors
ESD LIMITING VALUE
THERMAL RESISTANCES
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
July 1998
Rectifier diodes
ultrafast, rugged
SYMBOL PARAMETER
V
SYMBOL PARAMETER
R
R
SYMBOL PARAMETER
V
I
Q
t
t
V
R
rr1
rr2
C
F
fr
th j-mb
th j-a
s
Electrostatic discharge
capacitor voltage
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
j
= 25 ˚C unless otherwise stated
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 k
CONDITIONS
per diode
both diodes
SOT78 package, in free air
SOT404 and SOT428 packages,
pcb mounted, minimum footprint,
FR4 board
CONDITIONS
I
I
I
V
V
I
I
-dI
I
I
F
F
F
F
F
F
F
R
R
= 15 A; T
= 15 A
= 30 A
= 2 A; V
= 1 A; V
= 0.5 A to I
= 1 A; dI
F
= V
= V
/dt = 100 A/ s
RWM
RWM
; T
R
R
F
2
j
/dt = 10 A/ s
= 150˚C
j
R
= 100 ˚C
30 V; -dI
30 V;
= 1 A; I
rec
F
/dt = 20 A/ s
= 0.25 A
BYV42E, BYV42EB series
MIN.
MIN.
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
0.78
0.95
1.00
0.5
60
50
10
20
13
6
1
-
-
Product specification
MAX.
MAX.
MAX.
8
0.85
1.05
1.20
100
2.4
1.4
15
28
22
1
-
-
-
Rev 1.200
UNIT
UNIT
UNIT
K/W
K/W
K/W
K/W
mA
nC
kV
ns
ns
V
V
V
V
A