APT30DS60BG Microsemi Power Products Group, APT30DS60BG Datasheet - Page 3

• Manufacturer Part Number: APT30DS60BG
• Description: DIODE SERIES 2X20A 600V TO-247
• Manufacturer: Microsemi Power Products Group

Specifications of APT30DS60BG

• Voltage - Forward (vf) (max) @ If: 4V @ 30A
• Current - Reverse Leakage @ Vr: 250µA @ 600V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 24ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 6. Dynamic Parameters vs. Junction Temperature
250
200
150
100
100
400
350
300
250
200
150
100
Figure 8. Junction Capacitance vs. Reverse Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
50
50
0
0
0
.4
0
Figure 2. Forward Current vs. Forward Voltage
0
0
-di
I
RRM
T
V
V
F
J
R
= 125°C
F
/dt, CURRENT RATE OF CHANGE (A/µs)
= 400V
, ANODE-TO-CATHODE VOLTAGE (V)
T
30A
200
1
25
J
1
T
, JUNCTION TEMPERATURE (°C)
V
J
R
= 125°C
, REVERSE VOLTAGE (V)
T
J
400
50
2
= 150°C
t
rr
15A
Q
600
rr
75
3
10
100
T
800
4
J
= -55°C
t
T
rr
J
= 25°C
1000
125
Q
5
100 200
rr
60A
1200
150
6
Figure 7. Maximum Average Forward Current vs. CaseTemperature
Figure 5. Reverse Recovery Current vs. Current Rate of Change
Figure 3. Reverse Recovery Time vs. Current Rate of Change
30
25
20
15
10
60
50
40
30
20
10
25
20
15
10
0
5
0
5
0
25
0
0
-di
-di
T
Duty cycle = 0.5
V
T
V
J
R
J
R
F
F
T
= 125°C
= 125°C
= 400V
J
= 400V
/dt, CURRENT RATE OF CHANGE(A/µs)
/dt, CURRENT RATE OF CHANGE (A/µs)
= 150°C
200
200
50
Case Temperature (°C)
400
400
75
60A
600
600
15A
30A
100
800
30A
800
60A
125
1000
1000
15A
1200
1200
150