STPS10170CB-TR STMicroelectronics, STPS10170CB-TR Datasheet - Page 4

• Manufacturer Part Number: STPS10170CB-TR
• Description: DIODE SCHOTTKY 170V 2X5A DPAK
• Manufacturer: STMicroelectronics

Specifications of STPS10170CB-TR

• Voltage - Forward (vf) (max) @ If: 920mV @ 5A
• Current - Reverse Leakage @ Vr: 10µA @ 170V
• Current - Average Rectified (io) (per Diode): 5A
• Voltage - Dc Reverse (vr) (max): 170V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-6075-2

Characteristics
4/10
Figure 7.
Figure 9.
Figure 11. Thermal resistance junction to
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
100.0
80
70
60
50
40
30
20
10
1.E-01
1.E-02
90.0
80.0
70.0
60.0
50.0
40.0
30.0
20.0
10.0
0
0.0
0
0.0
0
0.2
5
25
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
Forward voltage drop versus
forward current (per diode)
ambient versus copper surface
under tab (epoxy printed board
FR4, Cu = 35 µm - D
0.4
10
0.6
50
T
T
T
T
T
j
j
j
=175°C
=150°C
=125°C
j
j
=75°C
=25°C
(Typical values)
(Typical values)
(Maximum values)
(Maximum values)
15
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C
0.8
75
S
CU
20
(cm²)
1.0
V
R
(V)
100
1.2
25
(Maximum values)
2
1.4
Tj=25°C
125
PAK)
30
1.6
V
150
FM
35
(V)
1.8
D²PAK
175
2.0
40
Figure 8.
Figure 10. Thermal resistance junction to
1000
100
100
10
90
80
70
60
50
40
30
20
10
0
1
0
5
Junction capacitance versus
reverse voltage applied (typical
values, per diode)
ambient versus copper surface
under tab (epoxy printed board
FR4, Cu = 35 µm - DPAK)
10
10
15
S
V
CU
R
(V)
(cm²)
20
25
100
30
STPS10170C
V
OSC
F=1MHz
T
=30mV
j
=25°C
35
DPAK
RMS
1000
40