STPS10L45CT STMicroelectronics, STPS10L45CT Datasheet - Page 2

• Manufacturer Part Number: STPS10L45CT
• Description: DIODE SCHOTTKY 45V 2X5A TO-220AB
• Manufacturer: STMicroelectronics

Specifications of STPS10L45CT

• Voltage - Forward (vf) (max) @ If: 530mV @ 5A
• Current - Reverse Leakage @ Vr: 150µA @ 45V
• Current - Average Rectified (io) (per Diode): 5A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

Characteristics
1
2/10
Characteristics
Table 1.
1.
Table 2.
When the diodes 1 and 2 are used simultaneously :
Δ
Table 3.
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.33 x I
Symbol
Symbol
Tj(diode 1) = P(diode1) x R
Symbol
R
R
R
R
I
V
I
V
F(RMS)
P
dV/dt
I
I
I
th(j-c)
th(j-c)
R
I
F(AV)
dPtot
---------------
th (c)
T
th (c
RRM
F
FSM
RSM
RRM
ARM
dTj
(1)
T
(1)
stg
j
)
<
------------------------- -
Rth j a
Reverse leakage current
Forward voltage drop
Junction to case
Junction to case
F(AV)
Repetitive peak reverse voltage
RMS forward voltage
Average forward
current
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
(
1
Absolute ratings (limiting values, per diode)
Thermal resistances
Static electrical characteristics (per diode)
–
)
condition to avoid thermal runaway for a diode on its own heatsink
+ 0.026 I
Parameter
F
2
(RMS)
th(j-c)
TO-220AB /
D
TO-220FPAB
2
PAK / I
(Per diode) + P(diode 2) x R
Parameter
TO-220AB / D
I
TO-220FPAB
Parameter
2
T
T
T
T
T
T
PAK
j
j
j
j
j
j
2
= 25° C
= 100° C
= 25° C
= 125° C
= 25° C
= 125° C
PAK
Test Conditions
Tc =135° C
δ = 0.5
T
δ = 0.5
t
t
t
t
p
p
p
p
c
2
= 2 µs square F = 1 kHz
= 10 ms sinusoidal
= 100 µs square
= 1 µs Tj = 25°C
PAK /
= 140° C
(1)
V
I
I
I
I
F
F
F
F
R
= 5 A
= 5 A
= 10 A
= 10 A
= V
RRM
Per diode
Per diode
Coupling
Coupling
Per diode
Per device
Per diode
Per device
Total
Total
th(c)
Min.
-65 to + 150
Typ.
0.36
0.49
45
Value
10000
Value
2700
0.35
150
150
1.7
3.8
2.5
45
20
10
10
3
5
5
5
1
2
STPS10L45C
Max.
0.15
0.53
0.46
0.67
0.59
90
°C/W
°C/W
V/µs
Unit
Unit
° C
° C
W
Unit
mA
mA
V
A
A
A
A
A
A
V