STPS16H100CG-TR STMicroelectronics, STPS16H100CG-TR Datasheet - Page 4

• Manufacturer Part Number: STPS16H100CG-TR
• Description: DIODE SCHOTTKY 100V 8A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS16H100CG-TR

• Voltage - Forward (vf) (max) @ If: 770mV @ 8A
• Current - Reverse Leakage @ Vr: 3.6µA @ 100V
• Current - Average Rectified (io) (per Diode): 8A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

STPS16H100CT/CG/CFP/CR
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
Fig. 9:
current.
100
4/7
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
10
1
0.0
I
FM
0
(A)
I (mA)
R
0.2
10
Forward voltage drop versus forward
(Maximum values)
(Maximum values)
20
(Typical values)
(Typical values)
T
T
j
j
=125°C
=125°C
T
T
j
j
0.4
=125°C
=125°C
30
0.6
40
V
T
T
T
T
T
j
j
j
T
=150°C
=125°C
=100°C
FM
j
j
=50°C
j
=75°C
=25°C
50
(V)
0.8
60
(Maximum values)
T
70
j
1.0
=25°C
V (V)
R
80
1.2
90
100
1.4
Fig. 8:
voltage applied (typical values).
1.00
0.10
0.01
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (epoxy printed
board FR4, Cu = 35µm).
80
70
60
50
40
30
20
10
0
0
Rth(j-a)(°C/W)
1
C(nF)
5
Junction capacitance versus reverse
10
15
S(cm²)
V (V)
20
R
10
25
30
V
F=1MHz
osc
T
j
=25°C
35
=30mV
D²PAK
100
40