STPS30L60CT STMicroelectronics, STPS30L60CT Datasheet - Page 3

• Manufacturer Part Number: STPS30L60CT
• Description: DIODE SCHOTTKY 60V 15A TO-220AB
• Manufacturer: STMicroelectronics

Specifications of STPS30L60CT

• Voltage - Forward (vf) (max) @ If: 600mV @ 15A
• Current - Reverse Leakage @ Vr: 480µA @ 60V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

STPS30L60C
Table 4.
1. Pulse test : tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation : P = 0.42 x I
Figure 2.
Figure 4.
Symbol
12
10
8
6
4
2
0
V
I
0.001
R
0.01
0
F
0.1
P
(1)
1
0.01
(1)
F(av)
P
P
ARM
ARM
2
(W)
Reverse leakage current
Forward voltage drop
(1 µs)
(t p )
δ = 0.05
4
Static electrical characteristics (per diode)
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
0.1
6
δ = 0.1
Parameter
8
1
I
F(av)
t (µs)
p
10
δ = 0.2
(A)
12
10
δ = 0.5
14
100
δ
16
=tp/T
δ = 1
Doc ID 6479 Rev 9
T
18
T
T
T
T
T
T
j
j
j
j
j
j
= 125 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 25 °C
tp
1000
Tests conditions
20
Figure 3.
Figure 5.
18
16
14
12
10
8
6
4
2
0
1.2
0.8
0.6
0.4
0.2
0
I
1
0
F(av)
V
I
I
I
I
25
F
F
F
F
P
δ
R
ARM
=tp/T
= 15 A
= 15 A
= 30 A
= 30 A
P
(A)
= V
ARM
(25 °C)
25
T
RRM
(T j )
Average forward current versus
ambient temperature
(
Normalized avalanche power
derating versus junction
temperature
tp
50
δ
= 0.5, per diode)
50
R
Min.
th(j-a)
F(AV)
=15 °C/W
75
T
amb
T (°C)
75
j
+ 0.009x I
(°C)
Typ.
0.65
0.5
77
TO-220FPAB
100
R
100
th(j-a)
Characteristics
=R
F
Max.
0.56
0.75
480
130
th(j-c)
0.6
0.7
2
125
(RMS)
125
Unit
mA
µA
150
V
3/12
150