DHG10C600PB IXYS, DHG10C600PB Datasheet - Page 2

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DHG10C600PB

Manufacturer Part Number
DHG10C600PB
Description
DIODE FAST REC 600V 5A TO-220AB
Manufacturer
IXYS
Datasheet

Specifications of DHG10C600PB

Voltage - Forward (vf) (max) @ If
2.2V @ 5A
Current - Reverse Leakage @ Vr
10µA @ 600V
Current - Average Rectified (io) (per Diode)
5A
Voltage - Dc Reverse (vr) (max)
600V
Reverse Recovery Time (trr)
35ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220AB
Vrrm, (v)
600
Ifavm, D = 0.5, Total, (a)
10
Ifavm, D = 0.5, Per Diode, (a)
5
@ Tc, (°c)
110
Ifsm, 10 Ms, Tvj=45°c, (a)
40
Vf, Max, Tvj =125°c, (v)
2.02
@ If, (a)
5
Trr, Typ, Tvj =25°c, (ns)
35
Irm , Typ, Tvj =25°c, (a)
2.0
@ -di/dt, (a/µs)
100
Tvjm, (°c)
150
Rthjc, Max, (k/w)
3.15
Package Style
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
I
R
M
F
T
Weight
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
Outlines TO-220AB
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
RMS
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
thCH
stg
D
C
G
J
thermal resistance case to heatsink
Definition
RMS current
mounting torque
mounting force with clip
storage temperature
C
L
K
Conditions
per pin*
M
N
Q
R
* Data according to IEC 60747and per diode unless otherwise specified
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Min.
12.70 13.97
14.73 16.00
9.91
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
Millimeter
DHG 10 C 600PB
Max.
10.66
4.08
6.85
3.18
1.65
5.84
1.01
BSC
4.82
1.39
0.56
2.79
min.
-55
0.4
20
Ratings
typ.
0.50
Min.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
2
Inches
max.
150
Max.
0.6
advanced
35
60
Unit
K/W
Nm
°C
N
A
g

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