STPS20150CG STMicroelectronics, STPS20150CG Datasheet - Page 4

• Manufacturer Part Number: STPS20150CG
• Description: DIODE SCHOTTKY 150V 10A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS20150CG

• Voltage - Forward (vf) (max) @ If: 920mV @ 10A
• Current - Reverse Leakage @ Vr: 5µA @ 150V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 150V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

Characteristics
4/10
Figure 7.
Figure 9.
Figure 11. Forward voltage drop versus
1E+5
1E+4
1E+3
1E+2
1E+1
1E+0
1E-1
100.0
10.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.1
1.E-03
I (µA)
0
0.0
R
Z
I
FM
th(j-c)
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
TO-220AB, I PAK and D PAK
(A)
0.2
/R
th(j-c)
25
Relative variation of thermal
impedance junction to case versus
pulse duration
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
forward current (per diode)
T =125°C
2
j
0.4
(typical values)
T =125°C
j
1.E-02
2
50
0.6
0.8
V
t (s)
T =125°C
T =175°C
T =150°C
T =100°C
T =25°C
p
j
j
j
j
j
FM
T =25°C
75
j
(V)
1.0
1.E-01
100
1.2
δ
=tp/T
1.4
125
T
V (V)
Doc ID 7756 Rev 9
1.6
R
tp
1.E+00
1.8
150
Figure 8.
Figure 10. Junction capacitance versus
Figure 12. Thermal resistance junction to
1000
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
80
70
60
50
40
30
20
10
10
0
1.E-03
0
R
1
C(pF)
Z
th(j-a)
th(j-c)
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
TO-220FPAB
(°C/W)
5
/R
2
th(j-c)
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
reverse voltage applied
(typical values, per diode)
ambient versus copper surface
under tab
1.E-02
10
5
Epoxy printed circuit board, copper thickness = 35 µm
15
10
S(cm²)
1.E-01
t (s)
V (V)
p
20
R
(STPS20150CG only)
20
25
1.E+00
30
50
δ
=tp/T
STPS20150C
T
100
35
F=1MHz
T =25°C
j
tp
1.E+01
40
200