STPS2045CT STMicroelectronics, STPS2045CT Datasheet - Page 3
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STPS2045CT
Manufacturer Part Number
STPS2045CT
Description
DIODE SCHOTTKY 45V 10A TO-220AB
Manufacturer
STMicroelectronics
Datasheet
1.STPS2045CFP.pdf
(10 pages)
Specifications of STPS2045CT
Voltage - Forward (vf) (max) @ If
570mV @ 10A
Current - Reverse Leakage @ Vr
100µA @ 45V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
45V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Schottky Rectifiers
Peak Reverse Voltage
45 V
Forward Continuous Current
10 A
Max Surge Current
180 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.84 V at 20 A
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-7550-5
STPS2045CT
STPS2045CT
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Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
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Manufacturer:
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Quantity:
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Part Number:
STPS2045CT
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STPS2045CTC
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STPS2045C
Figure 1.
Figure 3.
Figure 5.
140
120
100
8
7
6
5
4
3
2
1
0
0.001
80
60
40
20
0.01
0
0
P
0.1
1E-3
F(AV)
1
0.01
I (A)
M
P
P
I
1
ARM
M
ARM p
(W)
(1µs)
(t )
2
δ
=0.5
t
0.1
Average forward power dissipation
vs average forward current
(per diode)
Normalized avalanche power
derating vs pulse duration
Non repetitive surge peak forward
current vs overload duration
(maximum values, per diode)
δ = 0.05
3
1E-2
4
δ = 0.1
5
1
(TO-220AB, D PAK, I PAK)
I
F(AV)
t (µs)
p
t(s)
δ = 0.2
6
(A)
7
10
2
1E-1
8
δ = 0.5
9
2
100
δ
=tp/T
10
Doc ID 3506 Rev 6
δ = 1
T
T =100°C
T =75°C
T =125°C
11
C
C
C
tp
1000
1E+0
12
Figure 2.
Figure 4.
Figure 6.
12
10
100
1.2
0.8
0.6
0.4
0.2
8
6
4
2
0
80
60
40
20
0
1
0
1E-3
0
I
25
F(AV)
P
I (A)
M
ARM
P
δ
I
M
=tp/T
ARM
(A)
(25 °C)
25
(T j )
T
δ
=0.5
t
50
Average forward current vs ambient
temperature (
Normalized avalanche power
derating vs junction temperature
Non repetitive surge peak forward
current vs overload duration
(maximum values, per diode)
tp
50
1E-2
75
R
T
75
th(j-a)
amb
T (°C)
t(s)
=15°C/W
j
(°C)
δ
= 0.5, per diode)
R
100
th(j-a)
100
=R
th(j-c)
1E-1
TO-220FPAB
Characteristics
125
(TO-220FPAB)
125
150
TO-220AB
D²PAK
T =75°C
T =100°C
T =125°C
C
C
C
1E+0
3/10
150
175