DSSK48-003B IXYS, DSSK48-003B Datasheet - Page 4

• Manufacturer Part Number: DSSK48-003B
• Description: DIODE SCHOTTKY 30V 25A TO-220AB
• Manufacturer: IXYS

Specifications of DSSK48-003B

• Voltage - Forward (vf) (max) @ If: 440mV @ 20A
• Current - Reverse Leakage @ Vr: 20mA @ 30V
• Current - Average Rectified (io) (per Diode): 25A
• Voltage - Dc Reverse (vr) (max): 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Vrrm, (v): 30
• Ifavm, D = 0.5, Total, (a): 50
• Ifavm, D = 0.5, Per Diode, (a): 25
• @ Tc, (°c): 130
• Vf, Max, Tvj =125°c, (v): 0.35
• @ If, (a): 20
• Tvjm, (°c): 150
• Rthjc, Max, (k/w): 1.20
• Package Style: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
[A]
I
[K/W]
Z
I
F(AV)
[A]
F
thJC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
40
30
20
10
40
20
0
0.0
0
1
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Fig. 1 Maximum forward voltage
Fig. 4 Average forward current
40
T
150°C
125°C
drop characteristics
I
F(AV)
VJ
25°C
0.2
=
T
V
C
vs. case temperature T
F
80
[°C]
[V]
10
d = 0.5
0.4
120
DC
160
0.6
t [ms]
P
[mA]
[W]
100
(AV)
I
C
10000
R
1000
0.01
100
0.1
10
16
12
1
8
4
0
0
0
125°C
100°C
Fig. 2 Typ. reverse current
Fig. 5 Forward power loss
T
75°C
50°C
25°C
VJ
=150°C
Data according to IEC 60747and per diode unless otherwise specified
10
characteristics
I
R
10
1000
vs. reverse voltage V
I
V
F(AV)
R
20
[V]
[A]
20
30
d =
DC
0.5
0.33
0.25
0.17
0.08
10000
30
40
R
[pF]
C
T
10000
1000
100
Note: All curves are per diode
0
Fig. 3 Typ. junction capacitance
DSSK48-003B
C
T
10
vs. reverse voltage V
T
VJ
V
R
= 25°C
[V]
20
20100209a
30
R