DHG20C1200PB IXYS, DHG20C1200PB Datasheet
DHG20C1200PB
Manufacturer Part Number
DHG20C1200PB
Description
DIODE FRD CC 1200V 10A TO-220AB
Manufacturer
IXYS
Datasheet
1.DHG20C1200PB.pdf
(2 pages)
Specifications of DHG20C1200PB
Voltage - Forward (vf) (max) @ If
2.69V @ 10A
Current - Reverse Leakage @ Vr
15µA @ 1200V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Reverse Recovery Time (trr)
75ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220AB
Vrrm, (v)
1200
Ifavm, D = 0.5, Total, (a)
20
Ifavm, D = 0.5, Per Diode, (a)
10
@ Tc, (°c)
105
Ifsm, 10 Ms, Tvj=45°c, (a)
60
Vf, Max, Tvj =125°c, (v)
2.23
@ If, (a)
10
Trr, Typ, Tvj =25°c, (ns)
200
Irm , Typ, Tvj =25°c, (a)
9.0
@ -di/dt, (a/µs)
250
Tvjm, (°c)
150
Rthjc, Max, (k/w)
1.50
Package Style
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Sonic-FRD
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DHG 20 C 1200PB
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
Symbol
V
I
V
I
V
r
R
T
P
I
I
t
C
E
I
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
Features / Advantages:
R
FSM
RM
AR
FAV
F
rr
VJ
RRM
F0
tot
J
AS
operation
- Power dissipation within the diode
- Turn-on loss in the commutating switch
F
thJC
forward voltage
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
junction capacitance
non-repetitive avalanche energy
repetitive avalanche current
Definition
max. repetitive reverse voltage
reverse current
average forward current
for power loss calculation only
I
t
V
Conditions
V
V
I
I
I
rectangular, d = 0.5
I
-di
V
V
I
p
F
F
F
F
F
AS
R
R
R
R
A
F
Applications:
● Antiparallel diode for high frequency
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
● Uninterruptible power supplies (UPS)
=
=
=
=
= 10
=
=
=
=
=
=
=
/dt
switching devices
supplies (SMPS)
1.5·V
1200
1200
800
600
tbd
10
10
20
10
20
= 350 A/µs
ms (50 Hz), sine
A;
V
V;
A; L =
A
A
A
A
R
V
V
1
typ.;
f = 1 MHz
* Data according to IEC 60747and per diode unless otherwise specified
f = 10 kHz
100
2
µH
3
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
VJ
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
C
VJ
= 150 °C
=
= 45 °C
=
= 25
=
=
=
=
= 85 °C
= 25
= 125
= 25
= 125
=
125
125
25
25
25
25
25
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
DHG 20 C 1200PB
Package:
TO-220AB
● Industry standard outline
● Epoxy meets UL 94V-0
● RoHS compliant
V
I
t
FAV
rr
min.
RRM
-55
R a t i n g s
=
=
=
typ.
8.5
tbd
75
1200
Backside: cathode
10
75
max.
1200
2.69
3.56
2.38
3.33
1.60
73.6
1.80
150
advanced
tbd
tbd
1.5
15
10
70
70
V
A
ns
Unit
K/W
m
mA
mJ
µA
pF
°C
ns
ns
W
Ω
V
V
V
V
V
A
V
A
A
A
A
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DHG20C1200PB Summary of contents
Page 1
... C junction capacitance J E non-repetitive avalanche energy AS I repetitive avalanche current AR IXYS reserves the right to change limits, conditions and dimensions. © 2006 IXYS all rights reserved Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● ...
Page 2
... Irms is typically limited by: 1. pin-to-chip resistance current capability of the chip. In case common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-220AB IXYS reserves the right to change limits, conditions and dimensions. © 2006 IXYS all rights reserved Conditions per pin* M Dim ...