STPS4045CW STMicroelectronics, STPS4045CW Datasheet - Page 3

• Manufacturer Part Number: STPS4045CW
• Description: DIODE SCHOTTKY 45V 20A TO-247
• Manufacturer: STMicroelectronics

Specifications of STPS4045CW

• Voltage - Forward (vf) (max) @ If: 760mV @ 20A
• Current - Reverse Leakage @ Vr: 200µA @ 45V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

STPS4045C
Table 4.
1. Pulse test : tp = 380 µs, δ < 2%
Figure 1.
Figure 3.
V
Symbol
0.001
F
18
16
14
12
10
0.01
I
8
6
4
2
0
R
0.1
(1)
0
1
P F (av)(W)
0.01
(1)
P
P
ARM
ARM
2
(1 µs)
Reverse leakage current
Forward voltage drop
(t p )
4
Static electrical characteristics (per diode)
To evaluate the conduction losses use the following equation :
P = 0.43x I
0.1
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
6
δ=0.05
8
δ=0.1
10
Parameter
1
F(AV)
12
t (µs)
I F (av) (A)
p
δ=0.2
14
+ 0.01x I
10
16
18
F
δ=0.5
20
2
δ
(RMS)
100
=tp/T
22
Doc ID 4605 Rev 5
T
T
T
T
T
T
T
24
j
j
j
j
j
j
tp
δ=1
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
1000
Tests conditions
26
Figure 2.
Figure 4.
1.2
0.8
0.6
0.4
0.2
24
22
20
18
16
14
12
10
1
0
8
6
4
2
0
25
P
0
I F (av)(A)
ARM
P
V
I
I
F
F
ARM
δ
R
=tp/T
= 20 A
= 40 A
(25 °C)
= V
(T j )
25
T
RRM
50
Average forward current versus
ambient temperature
(δ = 0.5 per diode)
Normalized avalanche power
derating versus junction
temperature
tp
50
Min.
-
-
-
-
-
-
75
75
T (°C)
j
T amb (°C)
Typ.
0.56
100
0.7
11
-
-
-
100
R
th(j-a)
=R
125
Characteristics
TO-220AB
TO-220AB
th(j-c)
TO -247
Max.
0.76
0.63
0.94
0.83
200
40
-247
125
150
Unit
mA
µA
V
175
150
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