STTH2003CT STMicroelectronics, STTH2003CT Datasheet - Page 5
![DIODE 300V 2X10A TO-220AB](/photos/29/5/290504/to-220_sml.jpg)
STTH2003CT
Manufacturer Part Number
STTH2003CT
Description
DIODE 300V 2X10A TO-220AB
Manufacturer
STMicroelectronics
Specifications of STTH2003CT
Voltage - Forward (vf) (max) @ If
1.25V @ 10A
Current - Reverse Leakage @ Vr
20µA @ 300V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
300V
Reverse Recovery Time (trr)
35ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
300 V
Forward Voltage Drop
1.25 V at 10 A
Recovery Time
35 ns
Forward Continuous Current
20 A
Max Surge Current
110 A
Reverse Current Ir
20 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2743-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STTH2003CT
Manufacturer:
ST
Quantity:
10 000
Company:
Part Number:
STTH2003CT
Manufacturer:
STMicroelectronics
Quantity:
859
Company:
Part Number:
STTH2003CT
Manufacturer:
ST
Quantity:
1 000
Part Number:
STTH2003CT
Manufacturer:
ST
Quantity:
20 000
STTH2003C
Figure 7.
Figure 9.
Figure 11. Thermal resistance junction to
0.60
0.50
0.40
0.30
0.20
0.10
0.00
10
80
70
60
50
40
30
20
10
8
6
4
2
0
0
0
0
V
R
0
FP
S factor
th(j-a)
I =I
T =125°C
F
j
(V)
F(AV)
50
50
(°C/W)
5
100
100
Softness factor (tb/ta) versus dI
(typical values, per diode)
Transient peak forward voltage
versus dI
diode) (TO-220AB)
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, copper thickness:
35 µm) (D
10
150
150
15
200
200
S(Cu)(cm²)
dI /dt(A/µs)
F
2
dI /dt(A/µs)
/dt (90% confidence, per
F
PAK).
F
250
20
250
300
300
25
350
350
30
400
400
35
450
450
V =200V
T =125°C
R
j
F
/dt
500
500
40
Figure 8.
Figure 10. Forward recovery time versus dI
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
500
400
300
200
100
0
25
0
t (ns)
fr
50
100
Relative variation of dynamic
parameters versus junction
temperature (reference: T
(90% confidence, per diode)
50
150
200
dI /dt(A/µs)
S factor
I
RM
F
T (°C)
250
75
j
300
350
Characteristics
100
V =1.1 x V max.
FR
400
T =125°C
j
I =I
F
j
= 125°C)
F(AV)
F
450
F
5/11
/dt
125
500