STTH2003CT STMicroelectronics, STTH2003CT Datasheet - Page 3
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STTH2003CT
Manufacturer Part Number
STTH2003CT
Description
DIODE 300V 2X10A TO-220AB
Manufacturer
STMicroelectronics
Specifications of STTH2003CT
Voltage - Forward (vf) (max) @ If
1.25V @ 10A
Current - Reverse Leakage @ Vr
20µA @ 300V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
300V
Reverse Recovery Time (trr)
35ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
300 V
Forward Voltage Drop
1.25 V at 10 A
Recovery Time
35 ns
Forward Continuous Current
20 A
Max Surge Current
110 A
Reverse Current Ir
20 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2743-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STTH2003CT
Manufacturer:
ST
Quantity:
10 000
Company:
Part Number:
STTH2003CT
Manufacturer:
STMicroelectronics
Quantity:
859
Company:
Part Number:
STTH2003CT
Manufacturer:
ST
Quantity:
1 000
Part Number:
STTH2003CT
Manufacturer:
ST
Quantity:
20 000
STTH2003
Table 5.
Figure 1.
Figure 3.
Symbol
14
12
10
1.0
0.8
0.6
0.4
0.2
0.0
S factor Softness factor
8
6
4
2
0
1E-3
0
V
P1(W)
I
RM
t
t
Z
FP
rr
fr
th(j-c)
Single pulse
TO-220AB, D 2 PAK, I 2 PAK
/R
Reverse recovery time
Forward recovery time
Peak forward voltage
Reverse recovery current
2
th(j-c)
Recovery characteristics
Conduction losses versus average
forward current (per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration
δ = 0.05
Parameter
1E-2
4
δ = 0.1
I
F(AV)
t (s)
p
6
δ = 0.2
(A)
1E-1
8
T
T
T
T
j
j
j
j
δ = 0.5
= 25 °C
= 25 °C
= 25 °C
= 125 °C
δ
=tp/T
10
Doc ID 5377 Rev 9
Test conditions
δ = 1
T
tp
I
I
I
dI
I
dI
V
I
dI
I
dI
1E+0
F
R
F
F
F
F
FR
F
F
F
F
12
= 0.5 A, I
= 1 A, V
= 10 A
= 10 A,
= 10 A, V
= 1 A
/dt = -50 A/µs
/dt = 100 A/µs
/dt = 100 A/µs
/dt = 200 A/µs
= 1.1 x V
Figure 2.
Figure 4.
200
100
1.0
0.8
0.6
0.4
0.2
0.0
10
1E-2
1
0.50
Z
R
I
th(j-c)
FM
Single pulse
rr
CC
= 30 V
= 0.25 A
Fmax
(A)
0.75
= 200 V
/R
th(j-c)
1.00
Forward voltage drop versus
forward current (maximum values,
per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-22FP0AB)
T =125°C
j
1.25
1E-1
Min.
1.50
T =75°C
j
V
t (s)
p
1.75
FM
Typ.
0.3
(V)
T =25°C
j
2.00
1E+0
2.25
Characteristics
Max.
230
3.5
25
35
8
2.50
2.75
Unit
ns
ns
V
A
-
3/11
1E+1
3.00