STPS61150CW STMicroelectronics, STPS61150CW Datasheet - Page 3

DIODE SCHOTTKY 150V 30A TO-247

STPS61150CW

Manufacturer Part Number
STPS61150CW
Description
DIODE SCHOTTKY 150V 30A TO-247
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS61150CW

Voltage - Forward (vf) (max) @ If
840mV @ 30A
Current - Reverse Leakage @ Vr
20µA @ 150V
Current - Average Rectified (io) (per Diode)
30A
Voltage - Dc Reverse (vr) (max)
150V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TO-247-3
Product
Schottky Rectifiers
Peak Reverse Voltage
150 V
Forward Continuous Current
30 A
Max Surge Current
500 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.92 V at 60 A
Maximum Reverse Leakage Current
20 uA
Operating Temperature Range
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-3219
497-3219-5
497-3219

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STPS61150CW
Manufacturer:
ST
0
Part Number:
STPS61150CW
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STPS61150CW
Quantity:
2 400
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
Fig. 9: Forward voltage drop versus forward
current (per diode).
100.0
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
400
350
300
250
200
150
100
1.E-01
10.0
50
1.E-03
1.0
0.1
0
I (A)
0.0
M
I
10
FM
I
M
I (µA)
R
(A)
0.1
=0.5
t
30
0.2
(typical values)
T =125°C
j
0.3
(maximum values)
1.E-02
50
T =125°C
0.4
j
0.5
70
V
T =150°C
T =125°C
T =100°C
T =75°C
T =50°C
T =25°C
j
j
j
j
j
j
t(s)
V (V)
FM
R
0.6
(V)
90
0.7
(maximum values)
1.E-01
T =25°C
j
0.8
110
0.9
1.0
130
T =125°C
T =50°C
T =75°C
c
c
c
1.1
1.E+00
150
1.2
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
10000
1000
1.E-03
100
Z
Single pulse
th(j-c)
1
= 0.5
C(pF)
= 0.2
= 0.1
/R
th(j-c)
1.E-02
10
t (s)
V (V)
p
R
1.E-01
STPS61150CW
100
V
=tp/T
OSC
F=1MHz
T =25°C
=30mV
j
T
RMS
tp
1.E+00
1000
3/4

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